2N3506 JAN Search Results

2N3506

Contextual Info: Data Sheet No. 2N3506 Generic Part Number: 2N3506 Type 2N3506 Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-39 case. •

2N3507 equivalent

Abstract: 2N3506 2N3507
Contextual Info: 2N3506 thru 2N3507A Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 Data S heet No. 2N 3506 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3506 Type 2N3506 G eom etry 1506 P olarity NPN Q ual Level: JAN - JA N TXV

2N3506

Abstract: 2N3506J 2N3506JS 2N3506JV 2N3506JX
Contextual Info: 2N3506 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3506J

Contextual Info: 2N3506 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3506J • JANTX level (2N3506JX)

chip die npn transistor

Contextual Info: 2N3506 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3506J • JANTX level (2N3506JX)

Contextual Info: 2N3506 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3506J

Contextual Info: 2N3506 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

2N3507

Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507AL 2N3507L 2N3507 JANTX 072040
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL

2N3506

Contextual Info: 2N3506 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3506 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3506+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3506+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3506 MOTOROLA

Abstract: 2N3507 2N3506 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F
Contextual Info: MOTOROLA SC XSTRS/R F b3fc,7SS4 aüöfc.342 3 | D | T-3&H 2N3506 2N3507 M A X I M U M R A T IN G S ' Sym bol 2N3S06 2N3507 Unit VCEO 40 50 Vdc JAN, JTX, JTXV AVAILABLE Collector-Base Voltage VCBO 60 80 Vdc CASE 79-04, STYLE 1 Emitter-Base Voltage Veb o S.O

2N3507

Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2009. MIL-PRF-19500/349H 25 August 2009 SUPERSEDING MIL-PRF-19500/349G 1 August 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,

Contextual Info: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature

2N3506

Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2000. INCH-POUND MIL-PRF-19500/349E 28 August 2000 SUPERSEDING MIL-PRF-19500/349D 12 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

Contextual Info: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature

2N3507U4

Contextual Info: 2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The

U4 Package

Abstract: 2N3507U4
Contextual Info: 2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The

2N3507U4

Contextual Info: 2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The

2N3016

Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
Contextual Info: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418

2N2891

Abstract: 2N2985 2N3016 2N3419
Contextual Info: COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No C ase 2N2891 2N2892 TO-5 TO111 TO111 TO -5 T O -5 TO -5 TO -5 TO -5 STUD TO 61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419