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    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    2n3375

    Abstract: 2n3375 transistor 2N3553
    Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes


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    PDF 2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor

    2N3553

    Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
    Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes


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    PDF bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


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    PDF 2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


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    PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    2N3553

    Abstract: 2N3553 motorola U028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3553 2.5 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed for amplifier and oscillator applications in m ilitary and industrial equipment. Suitable for use as output, driver or pre­


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    PDF 2N3553 2N3553 2N3553 motorola U028

    2N3553

    Abstract: 2N3375 2N3733 2N 3375
    Text: s 'G S-THOMSON ÜSC D | 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r ? SOLID STATE MICROWAVE 2N 3375 2N 3632 THOMSON-CSF COMPONENTS CORPORATION 2N3553 2N 3733 ‘Montgomeryville, PA 1893Ç • 215 362-8500 ■ TWX 510-661-7299 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N:


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    PDF 7T2TE37 2N3553 2N3733 2N3375 2N3733 2N 3375

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


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    PDF 2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


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    PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    2N3553 motorola

    Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.


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    PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 2N3553 motorola MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340

    2N3866 MOTOROLA s parameters

    Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD

    MOTOROLA SELECTION mrf237

    Abstract: motorola mrf237 MRF515 Motorola transistors MRF630 MRF237 2N3553 Transistor 2N3866 2n3553 to-39 mrf237 MOTOROLA 2N3553 motorola
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.


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    PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 MOTOROLA SELECTION mrf237 motorola mrf237 MRF515 Motorola transistors MRF630 MRF237 Transistor 2N3866 2n3553 to-39 mrf237 MOTOROLA 2N3553 motorola

    motorola mrf237

    Abstract: MOTOROLA SELECTION mrf237 MRF846 MRF229 2N3553 motorola MRF627 MRF227 MRF237 MRF604 2N4427
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.


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    PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 motorola mrf237 MOTOROLA SELECTION mrf237 MRF846 motorola MRF627 MRF227 MRF237

    MRF648

    Abstract: MRF515 Motorola transistors MRF646 motorola MRF515 Motorola transistors MRF630 MRF646 Motorola transistors MRF629 Transistor MRF630 Motorola transistors MRF648 MRF644
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.


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    PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 MRF648 MRF515 Motorola transistors MRF646 motorola MRF515 Motorola transistors MRF630 MRF646 Motorola transistors MRF629 Transistor MRF630 Motorola transistors MRF648 MRF644

    MRF309

    Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.


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    PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 MRF309 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177

    2N3553

    Abstract: 2N3553 motorola
    Text: M O T OR O L A SC XSTRS/R F 4bE D b3fc>7254 G OT MOB O 2 ! f l OTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2.5 W — 175 MHz H IG H F R EQ U E N C Y T R A N SIS T O R NPN SILIC O N H IG H -FR EQ U EN C Y T R A N SIST O R NPN SILICO N . . . designed for amplifier and oscillator applications in military


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    MRF536

    Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 MRF536 MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237

    mrf502 gold transistor

    Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911

    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


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    PDF BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 BFS36 2N930 BFS37 2N2475 2N4127 ZT180 ZT181 ZT182 ZT183

    900 mhz oscillator using bfr91 transistor

    Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


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    PDF 17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237

    2N4041

    Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N4041 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29