2N3571 NPN Search Results

2N3571 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

2N3571 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N372A Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506 Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665	OCR Scan	2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052	PDF
Contextual Info: 2N3571 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2N3571	PDF
2N3511 Contextual Info: SEMEC a B LTD ^ B133167 DDDDQlb • SMLB T - ^ 7 '« / 2N3420 2N3421 2N3421LP 2N3425 2N3439 ■' HI-REL HI-REL HI-REL HI-REL CECC NPN NPN NPN NPN NPN 2N3440 2N3440S 2N3467 2N3508 2N3509 CECC CECC HI-REL HI-REL HI-REL NPN NPN PNP NPN NPN 2N3511 2N3571 2N3583	OCR Scan	B133167 20min 15min 30min 60min 300typ 150typ 600typ 2N3511	PDF
C736 Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633	PDF
BF178 Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BFQ36 BF257/8/9 BFQ37 BF178 bf179 BFT79 BF177 2N2219 2N2905 bf338 BC325	PDF
F13S Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 F13S BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent	PDF
C495 transistor Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C495 transistor c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 transistor C633 NPN C460	PDF
2N290 Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018 Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 bc143 BFT79 T018	PDF
2N4252 Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918 Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450	OCR Scan	4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High15 -150nS 240nS pnp hfe 70 BFT69 048J 2N3571 NPN bc143	PDF
2n3571 Abstract: 2N3570 2N3572 Contextual Info: TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: • Low Noise Figure . . . 7 dB Max at 1 GHz	OCR Scan	2N3570, 2N3571. 2N3572 2N3570 2n3571	PDF
FMT1061 Abstract: MD918A se3002 fairchild to-106 FTR129A 2N3571 2N3572 2N5770 FMT1061A FMT2090 Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont’d) Item PG [GM A] (O S C POW ER) dB @ f Min MHz D EV ICE NO. vCEO V Min *T MHz Min Cob [C ce] (C cb) pF Max (0.8) Pd ta NF dB Max @f MHz 25°C	OCR Scan	FMT2090 O-120 2N5770 PN3563 PN918 SE3002 O-106 FMT1061 FMT1061A FTR129A FMT1061 MD918A se3002 fairchild to-106 FTR129A 2N3571 2N3572 2N5770	PDF
2N3563 Abstract: BF163 se5020 Fairchild 2N2857 fairchild to-106 2N3880 BF159 PE5025 2N5130 BF167 Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz C0b @f MHz Pd ta 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ) 40 310 TO-106 [C ce]	OCR Scan	BF159 O-106 BF163 PE5025 FTR118 BF167 PE5030B BF222 2N3563 se5020 Fairchild 2N2857 fairchild to-106 2N3880 2N5130	PDF
High frequency transistors Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91 Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes	OCR Scan	BFY90 175mW 2N918 2N2708 O1000 2N3571 2N3572 2N2102 2N4036 High frequency transistors RF diodes 2n3570 ZT92 2N4036 ZT91	PDF
2N2708 Abstract: Ferranti ZT84 ferranti 2N2907a 2N3571 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86 Contextual Info: NPN LOW NOISE TABLE 5 NPN SILICON PLANAR LOW NOISETRANSISTORS The transistors shown in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-am plifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage V c e o / decreasing Collector	OCR Scan	2N3571 2N3572 2N2102 2N4036 2N2708 Ferranti ZT84 ferranti 2N2907a 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86	PDF

S-parameter 2N5179 Abstract: s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter Contextual Info: Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description Nominal fT - 1.8 G H z Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency - 10 M H z to 600 M Hz Geometry - 20 This series of N PN silicon planar transistors, packaged in the 509 case style are useful for low noise, high gain	OCR Scan	MA42020 2N2857 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 S-parameter 2N5179 s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter	PDF
2N2857 Model Abstract: 2N3570 Contextual Info: n i> — • sb4E5m D D o m s a i mmc — Silicon Low Noise Bipolar Transistors MA42020 Series and 2N2857 Description n / A ~ c o r i s e m i c o n D t BRl n g t o n r - ’J i- « ' Nominal fT - 1.8 GHz Nominal Current Range - 1-5 mA Iq Max. - 50 mA Frequency > 1 0 MHz to 600 MHz	OCR Scan	MA42020 2N2857 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 2N2857 Model 2N3570	PDF
BF225 Abstract: 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254 Contextual Info: Silicon Transistors Case Type No. c^ o T' Maximum Ratings at 25°C amb. C haracteristics SPEC IAL FEATURES 11 = 1“ o CJ ,-V CB V V Ce V V EB V •c A Ptot W !c mA hpE h A - 1 r- *- •, Min. Max. Min. ■c mA M c/s ^CE SAT	OCR Scan	2N915 2N916 2N918 2N2865 2S102 2S103 2S104 2S731 2N2540 2N2883 BF225 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254	PDF
2N2708 Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, lo w and medium pow er am plification from D.C. to radio frequencies in Commercial,	OCR Scan	2N3571 2N3572 2N2102 2N4036 2N2708 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91	PDF
2N1893 Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92 Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,	OCR Scan	2N3571 2N3572 2N2102 2N4036 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92	PDF
2N3609 Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625	PDF
C495 transistor Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495 Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250	OCR Scan	BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495	PDF
2N222A Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84 Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92	OCR Scan	BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A	PDF
2N6665 Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953 Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed	OCR Scan	SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953	PDF
2n222a Abstract: CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86 Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3	OCR Scan	ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2n222a CV7644 ZTX326 2n3600 CV7371 CV7373 ZT80 ZT83 ZT1481 ZT86	PDF

2N3571 NPN Search Results

2N3571 NPN Result Highlights (5)

2N3571 NPN Datasheets Context Search

2N372A

2N3511

C736

BF178

F13S

C495 transistor

2N290

2N4252

2n3571

FMT1061

2N3563

High frequency transistors

2N2708

S-parameter 2N5179

2N2857 Model

BF225

2N2708

2N1893

2N3609

C495 transistor

2N222A

2N6665

2n222a