2N3638 Search Results

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2N3638A

Contextual Info: 2N3638A Si PNP Lo-Pwr BJT 3.23 Transistors Bipolar Silicon PNP Lo. 1 of 1 Home Part Number: 2N3638A Online Store 2N3638A Diodes Si PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3644

Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

CLGA 10 lead nac

Contextual Info: LM185-1.2QML www.ti.com SNVS384B – OCTOBER 2005 – REVISED JANUARY 2014 LM185-1.2QML Micropower Voltage Reference Diode Check for Samples: LM185-1.2QML FEATURES DESCRIPTION • • • • The LM185-1.2 is a micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10 A to

2N3638

Abstract: AMS285 AMS385 12C-N AMS385A-1
Contextual Info: Advanced Monolithic Systems AMS285-1.2/AMS385-1.2 MICROPOWER VOLTAGE REFERENCE DIODE FEATURES APPLICATIONS • ±4 mV ±0.3% max. initial tolerance (A grade) • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Ω Dynamic Impedance (A grade)

2n2907 to92

Abstract: AMS285 AMS385 12C-N
Contextual Info: Advanced Monolithic Systems AMS285-1.2/AMS385-1.2 MICROPOWER VOLTAGE REFERENCE DIODE FEATURES APPLICATIONS • ±4 mV ±0.3% max. initial tolerance (A grade) • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Ω Dynamic Impedance (A grade)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

Contextual Info: LM185-1.2,LM285-1.2,LM385-1.2 LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode Literature Number: SNVS742D LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2N3638 equivalent

Abstract: LM385 22.5 2N3638 datasheet LM385A-1 2N3638 5518 LM285AM-1.2 LM385Z-1.2 IR thermometer LM385-1
Contextual Info: LM185-1 2 LM285-1 2 LM385-1 2 Micropower Voltage Reference Diode General Description The LM185-1 2 LM285-1 2 LM385-1 2 are micropower 2-terminal band-gap voltage regulator diodes Operating over a 10 mA to 20 mA current range they feature exceptionally low dynamic impedance and good temperature stability On-chip trimming is used to provide tight voltage tolerance Since the LM185-1 2 band-gap reference uses only

2N2907 SOT-23

Abstract: lm385 sot23 2n2907 SOT23 LM185 LM385-1
Contextual Info: LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10µA to 20mA current range, they feature exceptionally low dynamic impedance and good temperature stability.

Contextual Info: Advanced Monolithic Systems AMS285-1.2/AMS385-1.2 MICROPOWER VOLTAGE REFERENCE DIODE RoHS compliant FEATURES APPLICATIONS • ±4 mV ±0.3% max. initial tolerance (A grade) • Operating Current 10µA to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Dynamic Impedance (A grade)

285BX

Contextual Info: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N www.ti.com SNVS742D – MAY 2004 – REVISED JANUARY 2008 LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N FEATURES 1 • • • • • • 2 •

"15/32-32 UNS-2A"

Abstract: 103SR19A-1 15/32-32 UNS-2A
Contextual Info: Hall-effect Position Sensors with Sealed Housing 103SR Series Datasheet Hall-effect Position Sensors with Sealed Housing The 103SR Series Hall-effect position sensor assemblies are sealed in aluminum or stainless-steel threaded housings and meet NEMA 3, 3R, 3S, 4, 4X stainless-steel housing ,12 and 13 requirements.

ic fa 5518

Abstract: LM 8512 LM386-1 lm3861 lm385 IC circuit diagram JYp sot-23 JYp sot
Contextual Info: a t i o n a l S e m i c o n d u c t o r LM 1 8 5 - 1 .2 /L M 2 8 5 - 1 . 2 / L M 3 8 5 - 1 . 2 M ic ro p o w e r Voltage R efe re n c e D iode General Description The LM 18 5 -1 .2/LM 285-1.2/LM 385-1.2 are m icropow er 2-term inal band-gap voltage regulator diodes. O perating

LM185

Abstract: LM385-1 2N3638 metal package
Contextual Info: LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10 µA to 20 mA current range, they feature exceptionally low dynamic impedance and good temperature stability.

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor