2N370 Search Results

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N5451

Abstract: 2n5449
Contextual Info: TYPES 2N5449, 2N5450, 2N5451 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 9 , M A R C H 1 9 7 3 SILECTt TRANSISTORS* • For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers • Also Available in TO-92 Versions . . . 2N3704 thru 2N3706

2N3019

Abstract: JAN2N3700 2N3019S 2N3019S JAN
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

Contextual Info: Maximum Ratings Type No. VCBO ^CEO VEBÓ Electrical Characteristics Ta=25"C, Unless Otherwise Specified - (V) Min (V) Min (V) Min Pd 'c <W) (A) 6Tc=25°c 2N3702 40 25 5 0.625 0.6 2N3905 40 40 5 0.625 0.2 IcBO ^CB tas VCE (mA) e (V) (mA) 0 (V ) Max Max Min

2N3702

Abstract: 2N3703
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX

TO206AA

Abstract: hFE-100 2N3700
Contextual Info: 2N3700 Silicon Transistors - NPN/PNP Medium Power General Purpose Page 1 of 1 Silicon Transistors - NPN/PNP Medium Power General Purpose Contact Factory for complete specification. STI Type 2N3700 VCBO 140 hFE 100 IC A 150m Industry Type 2N3700 Notes *BVCEO

2N3700

Abstract: 2N3701 transistor 45 f 122 test 2N3700
Contextual Info: DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS TA=25°C Collector-Base Voltage

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

BFR39

Abstract: bfr40 BFR80 BFR81 BFR79 BFR41 NPN pnp MATCHED PAIRS BFR61 Bfr60 transistor BFR40
Contextual Info: Silect General P u rp ose T ra n sisto rs — Ic up to 800 m A C a se O u tlin e s Polarity PTOT Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) T IS90 (1) TIS91 (1) Maximum ratings BV BV C BO V CEO V Cont IC A

Contextual Info: SEMICONDUCTOR t m 2N3703 T O -9 2 'V & * ' CÊ PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e as g e n e ra l p u rp o s e a m p lifie rs and s w itc h e s re quirin g c o lle c to r cu rre n ts to 300 m A . S ourced fro m P ro c e s s 68. S ee P N 200 fo r c h a ra c te ristics.

2N3702

Abstract: PN200
Contextual Info: 2N3702 2N3702 B C TO-92 E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol

2N3704

Abstract: equivalent transistor 2n3704 PN100
Contextual Info: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Da ta S h e e t No. 2 N 3 7 0 0 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3700 Type 2N3700 G eom etry 4500 P olarity NPN Q ual Level: J A N -J A N S

2N3702

Abstract: 2N3702PNP
Contextual Info: SEMICONDUCTOR 2N3702 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

2N3703

Abstract: PN200
Contextual Info: 2N3703 E TO-92 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N3702

Abstract: data sheet 2N3702 2n3702 fairchild pnp general purpose amplifier pn200
Contextual Info: 2N3702 E TO-92 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4058

Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '

2N3702

Abstract: PN200
Contextual Info: 2N3702 FAIRCHILD SEM ICONDUCTOR tm 2N3702 PNP General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Rdtinys

2N3704

Abstract: PN100
Contextual Info: 2N3704 FAIRCHILD SEMICONDUCTOR tm 2N3704 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Rdtinys

2N4058

Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
Contextual Info: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

Contextual Info: 2N3700 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

2N3019 motorola

Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
Contextual Info: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage

2N3053

Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
Contextual Info: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous