2N6450 Search Results

Contextual Info: B 24 9-97 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • HIGH VOLTAGE Absolute maximum ratings at TA = 25°C 2N6449 -3 0 0 V -2 0 0 V Reverse Gate Drain Voltage -3 0 0 V -2 0 0 V Continuous Forward Gate Current Continuous Device Power Dissipation

2N6449

Abstract: CISS2 2N6450
Contextual Info: HIGH VOLTAGE 2N6449 2N6450 SILICON E PI TA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 5 5 9 , PG. 6 0 TO-39 Package • HIGH BV qss • • •300V MIN 2N6449 • HIGH POWER RATING . . . 5W ELECTRICAL DATA 00370 350dia 0 ^ 1 5 DIA

2n6449

Contextual Info: TELEDYNE Eö E COMPONENTS Ö H T b a a D ÜQ Üfc.552 T -\ S HIGH VOLTAGE 1 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559 TO -39 Package • HIGH BVqss - • • 300V MIN 2N6449

2N6449

Contextual Info: TYPES 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 1 2 0 0 3 , M A Y 1 9 7 3 -R E V IS E D S E P T E M B E R 1 9 7 6 HIGH-VOLTAGE FIELD-EFFECT TRANSISTORS • High V BR GSS . . . 300 V Min (2N6449) • High Dissipation Capability . . . 5 W

IF3601

Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current

2n6449

Abstract: 2N6450
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current

2N645

Abstract: 2N6449
Contextual Info: HIGH VOLTAGE 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY559 HIGH BVgss - • • 300V MIN 2N6449 HIGH POWER RATING . . . 5W ELECTRICAL DATA TO-39 Package 0.3SO =OIA Ö37Ö ABSOLUTE M A X IM U M RATINGS PARAMETER SYMBOL

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

2N4119

Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Contextual Info: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

F25 transistor

Abstract: 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-24 F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY