2N383 Search Results

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2N3838

Abstract: 2N3838 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D I b3L7254 OQflbB?"! 4 | F 2N3838 CASE 610A-04, STYLE 1 MAXIMUM RATINGS Symbol Value Collector-Emitter Voltage VCEO 40 Vdc Collector 1 to Collector 2 Voltage Voftage Rating any Lead to Case VC1C2 ± 120 ±12 0 Vdc Collector-Base Voltage

Contextual Info: 2N3838 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N3838 device in a 6-pin Flatpack package is military qualified up to a JANTXV level for

2SC288a

Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

Contextual Info: 2N3835 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition)

2N2857

Abstract: 2n3839 RF Transistors
Contextual Info: 2N2857 2N3839 NPN SILICON RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER

2N3831

Contextual Info: 2N3831 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

transistor f 421

Abstract: MILPRF19500 2N3838 2N4854 ic 421 2n4854 to-78 2N4854U Dual Transistors TO-78
Contextual Info: TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN JANTX JANTXV 2N4854 2N4854U 2N3838 MAXIMUM RATINGS Ratings Sym 2N3838 2 2N4854, U Unit Collector-Emitter Voltage Collector-Base Voltage

2N3839

Abstract: 2N2857
Contextual Info: Data Sheet 2N2857 2N3839 C e n t r a l M S I L I C O N S M A L L S I G N A L RF TRA N S ISTOR; Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 J E D E C T O - 7 2 CASE Manufacturers of World Class Discrete Semiconductors

2N3830L

Contextual Info: 2N3830L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

NPN transistor 2n2222 beta value

Abstract: 2n3838
Contextual Info: TYPE 2N3838 N -P -N , P-N-P D U A L SILICON TRANSISTOR B U L L E T I N NO. D L - S 6 7 7 5 0 1 , M A R C H 1 9 6 5 - R E V I S E D A P R I L 1967 DESIGNED FOR COM PLEM ENTARY MEDIUM-POW ER, HIGH-SPEED SWITCHING AN D GENERAL PURPOSE AM PLIFIER APPLICATIONS

Contextual Info: , Line, <~!>E.mL-L,onaiLctoi L/^i TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 Devices 2N4854 2N4854U 2N3838 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N3293

Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

Contextual Info: 2N3831 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)70 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.35 h(FE) Max. Current gain.

2N2857

Abstract: transistor 2n 3839 Scans-001060 2857 transistor 2857 2N3839
Contextual Info: 2N2857 2N3839 SILICON PLANAR NPN V H F/U H F AMPLIFIERS T he 2N 2857 and 2N 3 8 3 9 are silico n planar e p ita x ia l NPN tra n sisto rs in Jedec T O -7 2 m etal case, intended fo r a m p lifie r, o s c illa to r and c o n v e rte r a p p lica tio n s up t o 5 0 0 M H z. T he

2N3839

Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Contextual Info: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the

2N2857

Abstract: 2N3839
Contextual Info: JUnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Oats Sheet TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2857 2N3839 SILICON SMALL SIGNAL RF TRANSISTOR! JEDEC TO-72 CASE DESCRIPTION The , SEMICONDUCTOR 2N2857, 2N3839 types are NPN Silicon Small Signal Transistors

Contextual Info: 2N3838+JANTXV Transistors Complementary Monolithic Transistor Pair Military/High-RelY Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)600m P(D) Max. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)

2N3830

Contextual Info: 2N3830 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2N3294

Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

Contextual Info: 2N3830 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3831 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3830 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)