2N3851 Search Results

Contextual Info: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1

2N3751

Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
Contextual Info: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN

TO111

Abstract: 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996
Contextual Info: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8

Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

2N3997 JAN to-111

Abstract: 2N4116 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929
Contextual Info: MJæ J E LE C T R O N IC S , INC. [ - t i COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998

Contextual Info: 2N3851 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SPHV402

Abstract: 2N3853
Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

TO111

Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
Contextual Info: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000

Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

n4111

Abstract: 2N4211 2N3920 2N4116 2N4111 2N3851 2N3852 2N3853 2N3878 2N3879
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST 100 2N 3852 TO-59 60 2N 3853 TO-59 2N 3878 SAT. VOLTAGES Max. 'c V CE (A) V BE (A) (V) (V) 80 5 1 1 30 90 1 0.2 0.5 2 40 5 1 1 50 150 1 0.2 0.5 1 60 40 5 1 1 30 90 1 0.2 0.5 1 TO-66 120 50 7 5 0.5 50 200

transistor c 2060

Abstract: TO-59 Package 2N2877 752 transistor 2n2892 TRANSISTOR 751 TO111 package 2N1701 2N2893 3090L
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 PACKAGE NPN TO-8 J1L hp£@ Ic-/ VCE min/max @ A/V DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS 2N1483A 40 3 20-60@.75/4 2N1484A 55 3 2N1485A 40 2N1486A 2N1701 T f T VcE(s«t) @ (V @ A/A) p * •D fr WATTS

2N3016

Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
Contextual Info: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60

2N2999

Contextual Info: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D -7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

2N2999

Abstract: 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853
Contextual Info: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D-7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

2N1701

Abstract: 2N1485A npn transistor 2N1486A 2N1485 TRANSISTOR 751 2N1483A 2N1484A 2N170 to59
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 Ic/ VCE min/max @ AAO PACKAGE DEVICE TYPE (sus VOLTS Ic (max) AMPS NPN TO-8 2N1483A 40 3 20-60@.75/4 2N1484A 55 3 20-60@.75/4 JpL TM 2N1485A 40 2N1486A 2N1701 ^C E O ^FE ^CE(sat) p * WATTS fx (MHz)

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

b0951

Abstract: 2SC647 BLX19 BLX16 25G60 2n5979 2N4310 ST+T8+1060
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 • 50 60 65 70 75 · · 80 ·85 90 · 95 912 Ie Max (A) V(BA)CEO (V) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max PD Max TOper Max (a) (a) (W) (OC) Package Style >= 5 A, (Co nt' d)

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746
Contextual Info: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

2N3016

Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40