2N4013 Search Results

Contextual Info: r Z 7 * 7 # S G S - T H O M S O N R HiOraSOSDOS 2 N4013 HIGH-CURRENT SWITCH D E S C R IP T IO N The 2N4013 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-current switch used for memory applications requiring breakdown volt­ ages up to 30 V and operating currents to 1 A.

2N4033

Abstract: 2N4125 NPN 2N4047 8VC80
Contextual Info: D i V1CÍ TYPE PACKAGE BVCEO 8V C 80 BVEBO C B O # V C B IV M M |V I M M IVI M M l» A | 1.7*A 1.7*A 50 50 50 2N4013 ÎN 4 0 I4 2N4036 2N4027 2N 40Î8 NPN NPN PNP PNP PNP T O -18 T O -18 T O - 18 T O -18 T O -18 30 50 60 80 60 50 80 60 80 60 6 6 5 5 5 2N4029

BC548BP

Abstract: BC549BP PN4013 BC453C 2SC2859Y TBC548 PE254 BF127 BF253 BF121
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 BC848 BC848 2SC3940 TEC8013F JE9101B BC232M 2N5377 BF253-3 BC548P BC548PK ~g~:~~~ 15 20 BC548PS BC54SVI BC54SVIP BC549P TECS013G PE254B 2N5376 2SC3341 ¥~~~13H 25 30 PN4013 2N4013 BF253-4 JE9101C

2N4013

Abstract: transistor 2N4013
Contextual Info: 2N4013 HIGH-CURRENT SWITCH DESCRIPTION The 2N4013 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-current switch used for memory applications requiring breakdown voltages up to 30 V and operating currents to 1 A. TO-18 INTERNAL SCHEMATIC DIAGRAM

TA1N

Abstract: 2n4014
Contextual Info: TYPES 2N4013, 2N4014 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 7 , M A R C H 1973 FAST, H IG H -V O LT A G E , H IG H -C U R R E N T CORE D R IV E R S • hpE Guaranteed from 10 mA to 1 A • Guaranteed Switching Times at 500 mA •

2N4013

Abstract: 2n4014 DE800 2N4013 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F L2E 0 | b3b72S4 Q 0 f lt 3f l ö S | r - w - i? 2N4013 2N4014 CASE 22-03, STYLE 1 TO-18 TO-2Q6AA M AXIM UM RA TIN G S Symbol Rating 2N4013 2N4014 Unit Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 50 80 Emitter-Base Voltage

2n4013

Contextual Info: 2N4013 SILICON NPN TRANSISTOR DESCRIPTION: The ASI 2N4013 is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS IC 1.0 A VCEO 30 V VCBO 50 V VEBO 6.0 V PDISS 1.4 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

2N3725

Abstract: complement to 2n3700 2N3253 TA100-F FTS03904 curve set t144 2N3700 2N3724 test 2N3700 tl 4013
Contextual Info: FAIRCHILD SEMICONDUCTOR _ A4 _ DE §341^1,74 GOSTSSl 3 FAIRCHILD 2N3253 A Schlumberger Company NPN Switching Type ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures Storage Temperature -65° C to 200° C Operating Junction Temperature 200° C Power Dissipation (Notes 2 & 3)

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N3725

Contextual Info: NATL SEfllCOND DISCRETE 22E D • t.SG113Q QG377ÖQ 2 ■ NPN Switching Transistors by Ascending Vceo Vceo (V) Min VCbo (V) Min . Vce(sat) (V) Max @ Ic/lb (niA) Cob (pF) Max Ft (MHz) Max *(otf) (ns) Max MMBT5134 PN5134 10 10 20 20 0.25 0.25 10/1.0 10/1.0