2N3253 Search Results

2N3725

Abstract: complement to 2n3700 2N3253 TA100-F FTS03904 curve set t144 2N3700 2N3724 test 2N3700 tl 4013
Contextual Info: FAIRCHILD SEMICONDUCTOR _ A4 _ DE §341^1,74 GOSTSSl 3 FAIRCHILD 2N3253 A Schlumberger Company NPN Switching Type ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures Storage Temperature -65° C to 200° C Operating Junction Temperature 200° C Power Dissipation (Notes 2 & 3)

2n3253

Abstract: 2N3253 JANTX
Contextual Info: 2N3253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3253S+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.75

Contextual Info: 2N3253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3252

Abstract: 4201P 2N3253
Contextual Info: TYPES 2N3252, 2N3253 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 7 4 3 6 . M A R C H 1 9 6 5 - R E V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS m echanical d ata ab solu te m axim u m ratin g s a t 2 5 °C fre e -a ir tem p eratu re unless o therw ise noted

2N3253

Contextual Info: ÀSII 2N3253 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS Ie 1.0 A V ce 40 V Pdiss 5.0 W @ Te = 25 0C Pdiss 1.0 W @ Ta = 25 0C Tj -65 0C to #200 0C T stg -65 0C to #200 0C

2SC1018

Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252

Contextual Info: 2N3253+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25

2N3253

Abstract: 25175M
Contextual Info: 2N3253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: m 2N3253 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS lc 1.0 A V ce 40 V P diss 5.0 W @ Tc = 25 °C P diss 1.0 W @ T a=25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W

2n3252

Abstract: 2N3444 2N3444 JAN 2N3252 MOTOROLA 2N3253
Contextual Info: motorola sc / xstrs r 15E 0 I f b 3b72 SM QafibBliS T-3&9 2N3252* 2N3253 2N3444 MAXIMUM RATINGS Symbol 2N3252 2N3253 2N3444 Rating Unit Coliector-Emltter Voltage VcEO 30 40 50 Vdc Collector-Base Voltage VCBO 60 75 80 Vdc Emitter-Base Voltage v E bo 5.0 Total Device Dissipation

2N3253

Abstract: 2N32
Contextual Info: 2N3253 NPN Switching Type. 2.85 Transistors Bipolar Silicon NPN Pow. 1 of 1 Home Part Number: 2N3253 Online Store 2N3253 Diodes NPN Sw itc hing Ty pe. Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 2N3253 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES • High Voltage Switching 12.70 (0.500) min. 0.89 max. (0.035) • Hermetic TO39 Package 0.41 (0.016)

Contextual Info: 2N3253+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.75

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

2N5146

Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­