2N414 Search Results

2N4250

Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
Contextual Info: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248

Contextual Info: , L/nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SCRs .5 Amp, Planar 2N4149 FEATURES • Voltage Ratings: to 400V • Maximum Gate Trigger Current: 200jiA • Hermetically Sealed TO-18 Metal Can

2n4140

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4140 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH Maximum Voltages and Currant VCBO Collector to Base Voltage V CEO Collector to Emitter Voltage (Note 4)

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

AC122

Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N4148

Abstract: 15-V AD671 AD841 AD845 ADC71 AN-271 DG417 DG419 AD843
Contextual Info: U ANALOG ^ d e v ic e s ^ AN-271 application note ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Build Precise S/H Amps for Fast 12-Bit ADCs by John Sylvan T oday ’s F a st , P r e c isio n IC O p A m ps A n d F E T

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N4248

Abstract: 2N4142 transistor 2N4248 2N4143 CIL157 CIL157B CIL246 CIL258 CIL261 CIL223
Contextual Info: TO-106 EPOXY PACKAGE TRANSISTORS PNP Type vceo (V) Mir V EBO (V) Min CIL261 100 100 5.0 C1L251 80 80 2N42S4A 60 CtL241 V CBO No. (Ta=25°C, U nless Otherwise Specified) Electrical Characteristics Maximum Ratings (V) Min IcBO • m e hFE V CB lc (mA) & V CE

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

2N4148

Abstract: 15-V AD671 AD841 AD845 DG417 DG419 DG542 SD5001 A-D CONVERTER HIGH SPEED
Contextual Info: ► AN'271 ANALOG DEVICES APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Build Precise S/H Amps for Fast 12-Bit ADCs by John Sylvan T o d a y ’s F a s t , P r e c is io n IC O p A m ps A n d F E T

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current

2H5061

Abstract: 2N268 2N2601 2N893
Contextual Info: discrete devices lir^ ] JEmitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silico n controlled rectifiers Type 'Note 1 Forward Current It (Amps) Max. Forward Max. Reverse Voltasti V fom / V rom (volts) (Noto 2) Maximum

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

2N3643 TO-105

Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225

Contextual Info: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE. =13 D • Ô5 1 3 Ô S 0 D 0 0 3 5 Ö7 SEM ICO N D S/IC S 93D 5 ■ 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain

2N3106

Abstract: 2N4146 2N4148
Contextual Info: discrete devices | jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current If (Amps) Max. Forward M ai. Reverie Voltages Vfom /V rom (volts) (Note 2) Maximum Junction Temperature