P2N2907 Search Results

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. M PSA 9 3 M PSL51 P2N2907 ^ c so ^CEO V EBO (V) Min (V) Min (V) Min 200 200 5 100 60 100 40 4 5 Electrical Characteristics (Ta=25'C. Unless Otherwise Specified) 'c (W) (A) 0Tc=25°c 0.625 0.625

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

Contextual Info: P2N2907A M AXIM UM RATINGS Symbol Value Unit C o lle c to r - E m itte r V o lta g e Rating v CEO - 60 Vdc C o lle c to r - B a s e V o lta g e v CBO -6 0 Vdc E m it t e r - B a s e V o lta g e v EBO - 5 .0 Vdc C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: P2N2907A Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor PNP Silicon P2N2907A COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Ve b o -5.0 Vdc Emitter-Base Voltage

BC237

Abstract: transistor BC108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor P2N2907A PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –60 Vdc Collector – Base Voltage VCBO –60 Vdc Emitter – Base Voltage

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

Contextual Info: ON Semiconductort Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon P2N2907A BASE MAXIMUM RATINGS Rating Sym bol Value Unit C olle cto r- Emitter Voltage v CEO -6 0 Vdc C ollector-B ase Voltage VCBO -6 0 Vdc E m itter-B ase Voltage Ve b o -5 .0 Vdc Collector Current — Continuous

P2N2907

Abstract: P2N2907A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package C BE Designed for switching and linear applications, DC amplifier and driver for industrial applications

Contextual Info: MOTOROLA Order this document by P2N2907A/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol Value Unit v CEO -6 0 Vdc C o lle c to r-B a s e Voltage v CBO -6 0

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package C BE Designed for switching and linear applications, DC amplifier and driver for industrial applications

Contextual Info: ON Semiconductort Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

MPSA93

Abstract: MPSL51 P2N2907 P2N2907A PN2906 PN2906A PN2907 PN2907A PN3638 PN3638A
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25"C, U Pd 'c eo V CBO ^CEO ^EBO (V) Min (V) Min (V) Min MPSA93 200 200 5 0.625 0.5 0.25 MPSLS1 100 100 4 0.625 0.6 P2N2907 60 40 5 0.625 0.6 P2N2907A PN2906 PN2906A

1N916

Abstract: P2N2907A
Contextual Info: ON Semiconductort Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous

Contextual Info: P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO

oscilloscope

Abstract: 907a Vbe 8 V IC data book free download pnp Saturation transistor to-226 Semiconductor Components Industries 1N916 P2N2907A P2N2907AG P2N2907ARL1
Contextual Info: P2N2907A Amplifier Transistor PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage

MPSL51

Abstract: P2N2907 PN2906 PN2906A PN2907 PN3638 PN3638A PN3644 PN3645
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. MPSA93 MPSL51 P2N2907 P2N2907A PN2906 PN2906A PN2907 PN29Q7A PN3638 PN3638A 200 ^CEO ^EBO (V) Min (V) Min 200 'c (W) (A) @Tc=25°c

1N916

Abstract: P2N2907A
Contextual Info: MOTOROLA Order this document by P2N2907A/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor P2N2907A PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –60 Vdc Collector – Base Voltage

1N916

Abstract: P2N2907A P2N2907AG P2N2907ARL1G
Contextual Info: P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -60 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO

P2N2907A

Abstract: P2N2907
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package C BE Designed for switching and linear applications, DC amplifier and driver for industrial applications

Contextual Info: P2N2907 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.30 h(FE) Max. Current gain.

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9