2N4403 Search Results

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

2N4403

Abstract: cd200
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2N4403 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : . Low Leakage Current ; I c E V = - 1 0 0 n A ( M a x •)> l B E V = 1 0 0 nA ( M a x . ) @ VCE=-35V, V b e =0.4V

2N4403

Contextual Info: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N4403 - Central Semiconductor 2N4403

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

SOT-23 2N4403

Abstract: 2N4403
Contextual Info: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package

AN9006

Abstract: SOT23 MARK Y3 C2N4403 2n4403
Contextual Info: 2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 B SOT-23 E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 45E D • TCH72S0 00177b? T «TOSH TOSHIBA TRANSISTOR - 2N4403 SILICON PNP EPITAXIAL TY P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : I c E V = _ 1 0 0 n A ( M a x .) ,

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

Contextual Info: NEW PRO DUCT NEW PRO DUCT 2N4401 SMALL SIGNAL TRANSISTORS NPN FEATURES TO-92 0.181 (4.6) 0.142 (3.6) ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended.

Contextual Info: MICRO CASE T0-92A THE 2N4400, 2N4401 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N4402 AND 2N4403 RESPECTIVELY. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N4403 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier

2N4401

Abstract: 2N4403 CMLT4413 2N4401 surface mount NPN, PNP for 500ma, 30v
Contextual Info: CMLT4413 SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4403 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N4403 Features • • x x Through Hole Package Capable of 600mWatts of Power Dissipation Case Material: Molded Plastic. UL Flammability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4403 TRANSISTOR PNP TO-92 FEATURES Power dissipation MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter VCBO 1.EMILTTER Value Units Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4403 TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.625 Collector current ICM : -0.6 Collector-base voltage V BR CBO : -40 TO—92 W （Tamb=25℃） 1.EMILTTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4403 TRANSISTOR PNP TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. EMILTTER Value Unit VCBO Collector-Base Voltage

Contextual Info: V : -O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS

C2N4403

Abstract: 2N4403L-T92-B 2N4403 2N4403-T92-B 2N4403-T92-K
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: 2N4403L

PN4401

Abstract: R2X marking
Contextual Info: SST4403 / MMST4403 / 2N4403 Transistors NPN Medium Power Transistor Switching SST4403 / MMST4403 / 2N4403 zExternal dimensions (Unit : mm) 2.9±0.2 SST4403 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 +0.2 1.3 − 0.1 MMST4403 2N4403 SST3 SMT3 TO-92 Marking

pin configuration transistor 2n4401

Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
Contextual Info: 2N4401 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.

2N4403 surface mount

Abstract: 2N4403
Contextual Info: visHAY 2N4403 PNP SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications TO-92 Mechanical Data_

Contextual Info: 2N4401 NPN SMALL SIGNAL TRANSISTOR Features • · · · Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary PNP Type Available 2N4403 E A C Mechanical Data

10D3

Abstract: 2N4401 2N4403
Contextual Info: 2N4403 2N4403 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-10-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse