2N5088 FAIRCHILD Search Results

2N5088BU

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2n5089 spice

Abstract: 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088

Abstract: transistor 2N5088 2N5088 equivalent 2n5088 transistor 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

1r sot-23

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1mA to 50 mA.

TIC 1160

Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5089

Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088 Fairchild

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

PN930

Abstract: 2N5088
Contextual Info: SEMiCONDUCTQR PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1pi to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS

Contextual Info: SEMICONDUCTOR • 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS

2N5961

Abstract: 2N5088 CBVK741B019 F63TNR PN2222N
Contextual Info: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: SEMICONDUCTOR ¡m 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. AbSOlUtG Maximum RâtinÇjS

2N5961

Abstract: 2N5088
Contextual Info: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

2n5210 equivalent

Abstract: 2n5210 2N5210 datasheet 2n5088 transistor 2N5088 2N5210 c
Contextual Info: 2N5210 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*

PN930

Abstract: 2N5088 equivalent 2N5088
Contextual Info: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

2N5088

Abstract: CBVK741B019 F63TNR PN2222N PN930
Contextual Info: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

2N5962

Abstract: MMBT5962 2N5088
Contextual Info: 2N5962 MMBT5962 C E C TO-92 BE B SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: 2N5962 MMBT5962 C E C TO-92 BE B SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*

MPSA18

Abstract: 2n5088 transistor MPSA18C 2N5088 MPSA18 Fairchild
Contextual Info: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

MPSA18

Abstract: 2N5088 CBVK741B019 F63TNR PN2222N MPSA18C MPSA18 Fairchild
Contextual Info: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Contextual Info: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

PN2484

Abstract: 2n5088 transistor 2N5088 equivalent npn general purpose high voltage amplifier 2N5088 MMBT2484
Contextual Info: PN2484 MMBT2484 C E C BE TO-92 SOT-23 B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

2N5088

Abstract: 2N5210
Contextual Info: S E F ^ ^ C N D ; -E T ^ a rî 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1^A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.