2N514 Search Results

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2N5001

Abstract: 2n5149 2N5147 2N5000 transistor 2N 3792 2N4999 2N5001 ti APPLICATION for MIN 5758 2N4998 2N5148
Contextual Info: TYPES 2N 4999, 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W ITH C O M P U TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y I * For Complementary Use With 2 N 49 98, 2 N 50 00, 2N 5 1 4 8 , and 2N 51 50

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

Contextual Info: 2N5148 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N5140 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)5.0 V(BR)CBO (V)5.0 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nx @V(CBO) (V) (Test Condition)

Contextual Info: 2N5141 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

2NS400

Abstract: transistor bc252b 2N5142 2N5143 2N5226 2N5354 2N5355 2N5365 2N5366 2N5401
Contextual Info: M axim um Ratings Type No. 2N5142 2N5143 2N5221 ^CBO ^CEO ^EBO M Min V (V) Min Min 20 20 4 20 15 20 15 4 3 Electrical Characteristics (Ta=25°C, Unless O therw ise Specified) ?D (W) (A) @Tc=25°< 0.625 0.625 0.625 ^CBO ^CB 'c e s ^CE (UA) Max 8(V) (da) Max

Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N5148

Contextual Info: 2N5148 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Contextual Info: 2N5147 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)

pnp germanium to36

Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652

Contextual Info: 2N514 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40º V(BR)CBO (V)40 I(C) Max. (A)25 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)25

Contextual Info: 2N5148 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5149 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5147 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. 2N4972 2N5086 2N5067 2N5142 2N5143 ^CBO ^CEO V EBO (V) Min (V) Min (V) Min 60 40 5 60 50 20 20 50 50 20 20 3 3 4 4 'c Pd (W) (A) 0Tc=25"c 0.625 0.625 0.625 0.625 0.625 0.6 0.05 0.05 ^CB ^CES

2N4249

Abstract: 2N5055 2N719A 2N4248 2N547 2N657A 2N4250 2N4250A 2N4389 2N4964
Contextual Info: bi CENTRAL SEMICONDUCTOR VCB VCE V EB hFE at lc VCE V V V min ma mA V V mA MHz pF 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 — — 120 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75

2N5055

Abstract: 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547 2N4389
Contextual Info: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 - TYPE NO. 2N4248 2N4249 2N4250 2N4250A 2N4964 2N4965 2N5086 2N5087 2N5378 2N5379 Vcb V 40 60 40 70 50 50 60 60 40 40 VCE V eb V V 5 40 60 5 40 5 5 60 5 40 40 5 50 3 3 50 30 5 30 5 hFE

2N4998

Contextual Info: ^ General Semiconductor * Industries, Inc. ^ ^ 2N5148 2N5150 DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These de vice s a re d e sig n e d fo r use in p ow er am p lifie rs a n d high speed sw itching a p p lica tio n s. The latest te ch n o lo g ie s a re used to o ffe r the

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

Contextual Info: 2N514A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60º V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)25

Contextual Info: 2N514B Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)80 I(C) Max. (A)25 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)25

2N4248

Abstract: 2N4249 2N4250 2N4250A 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910
Contextual Info: bl SEMICONDUCTOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75 0.6 0.4 0.15 — — 120 c