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STMicroelectronics


STMicroelectronics DATAPACK/JANSR2N5401UBG Single Bipolar Transistor, PNP, 150 V, 500 mA, 580 mW, SMD, 4 Pins, Surface Mount - Bulk (Alt: DATAPACK/JANSR2N5401UBG)
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Avnet Americas	DATAPACK/JANSR2N5401UBG	Bulk		111 Weeks	1	1 $526.05 10 $526.05 100 $526.05 1000 $526.05 10000 $526.05	Buy Now
STMicroelectronics SLDC-CHARGE/JANS2N5401UBT - Bulk (Alt: SLDC-CHARGE/JANS2N)
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Avnet Americas	SLDC-CHARGE/JANS2N5401UBT	Bulk		111 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics JANSR2N5401UBG - Bulk (Alt: JANSR2N5401UBG)
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Avnet Americas	JANSR2N5401UBG	Bulk		111 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics JANSR2N5401UBT Trans GP BJT PNP 150V 0.5A 4-Pin UB - Bulk (Alt: JANSR2N5401UBT)
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Avnet Americas	JANSR2N5401UBT	Bulk		111 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics JANS2N5401UBT - Bulk (Alt: JANS2N5401UBT)
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Avnet Americas	JANS2N5401UBT	Bulk		111 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N5401UB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5401UB06 Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics	Original	2N5401HR 2N5401HR 2N5401UB06	PDF
2n5401ub Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 February 2013. INCH-POUND MIL-PRF-19500/766 26 November 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER,	Original	MIL-PRF-19500/766 2N5401UB, MIL-PRF-19500. 2n5401ub	PDF
2n5401 smd Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■	Original	2N5401HR 2N5401HR 2n5401 smd 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES	PDF
2n5551 smd Abstract: 2N5551HR Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR 2n5551 smd	PDF
JANSR2N5401UB Abstract: 2N5401UB06 J2N5401UB1 Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate	Original	2N5401HR 2N5401HR MIL-PRF19500 DocID16934 JANSR2N5401UB 2N5401UB06 J2N5401UB1	PDF
2N5551UB Abstract: package LCC-3 Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL	Original	2N5551HR 2N5551HR 2N5551UB package LCC-3	PDF
2N5401HR Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics	Original	2N5401HR 2N5401HR	PDF
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate	Original	2N5401HR 2N5401HR MIL-PRF19500 DocID16934	PDF
2N5401UB1 Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■	Original	2N5401HR 2N5401HR 2N5401UB1	PDF
2N5551UB Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1 Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1	PDF
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR	PDF