2N5457 MOTOROLA Search Results

2N5457 MOTOROLA

Abstract: 2N5457
Contextual Info: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc

2N5457 MOTOROLA

Contextual Info: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose 2N5457 N-Channel — Depletion ‘ Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit D ra in -S o u rc e Voltage Vd S 25 Vdc D ra in -G a te Voltage

2N5457 MOTOROLA

Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc

2NS457

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose N-Channel — Depletion 2N5457 1 DRAIN ‘ M otorola Preferred D evice MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating V DS 25 Vdc D rain-Gate Voltage VDG 25 Vdc Vdc Reverse Gate-Source Voltage

2N5457 MOTOROLA

Abstract: 2N5457
Contextual Info: 2N5457* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource Voltage Rating Vd S 25 Vdc Drain-G ate V o ltage vdg 25 Vdc V g SR -2 5 Vdc 'g 10 m A dc Pd 310 2.82 mW mW/°C Tj 125 °C Tstg - 6 5 to +15 0 °C Reverse G ate-Source V o ltage

2NS457

Abstract: 2N5457 MOTOROLA 2N5457
Contextual Info: 2N5457* CASE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M R A T IN G S Rating D rain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Vd s 25 Unit Vd c V DG 25 Vd c Vd c V G SR -25 Gate Current IG 10 m A dc Total Device D issipation @ T a = 25°C

2N5457 equivalent

Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
Contextual Info: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C

2n 5459

Abstract: 2N5457
Contextual Info: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 | XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting

2N5459 MOTOROLA

Abstract: Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457
Contextual Info: 2N5457 thru 2N5459* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e Vd S 25 Vdc D ra in -G a te V o lta g e Vd G 25 V dc R e verse G a te -S o u rc e V o lta g e V g SR -2 5 V dc G a te C u rre n t 1g 10 m Adc T o ta l D e vice D is s ip a tio n (u T ^ = 25CC

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

MPF111

Abstract: 2N5459 MOTOROLA 2N3436 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
Contextual Info: ¥4 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA * SC D E | b B b 7 a S S □ □ 3fl03b <D I O D E S / O P T O 34C :> 1 38036 D '7^-2'J-tsr' FIELD-EFFECT TRANSISTORS DICE continued) die n o . 2C4220 LINE SOURCE — DFM131 This die provides performance equal to or better than that of

transistor 2N5457

Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
Contextual Info: MMBF5459LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Symbol Value Unit Vd G 25 Vdc Vg s W -2 5 Vdc 'g 10 mAdc Symbol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/W TJ. TstH -5 5 to +150 °C CASE 318-07, STYLE 10

J203

Abstract: J202 2N545
Contextual Info: J202 J203 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 40 Vdc D rain-G ate Voltage VDG 40 Vdc G ate-Source Voltage V GS 40 Vdc Gate C urrent 'G 50 mA Total Device D issipa tion (w T^ = 2haC Derate above 25°C

transistor 2N5457

Abstract: transistor 6D sot23 MMBF5457LT1
Contextual Info: MMBF5457LT1* M AXIM UM RATIN GS Rating Symbol Value VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GSIrl 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW X r 9JA 556 6C/W Tj- Tstq - 5 5 to +150 ÙC Reverse Gate-Source Voltage Gate Current CASE 318-07, STYLE 10

2N4221 motorola

Abstract: 2N4360 MPF3821 2n5270 motorola 2n4360 2N4220 MOTOROLA 2N5465 MOTOROLA 2N4222 motorola 2N5458 motorola 2N5457 MOTOROLA
Contextual Info: FIELD-EFFECT TRANSISTORS continued Low-Frequency/Low-Noise (continued) P-Channel JFETs Re \ ros Re Yfs Package TO 92 t = Device MPF111 (mmho) MIN @ VDS (V) (umho) MAX @ VDS (V') 0.5 10 200 10 c lss c rss V(BR)GSS v (BR)GDO (pF) (MAX) (pF) MAX (V) MIN MIN

Contextual Info: M A X IM U M RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB TH ER M A L CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C r »j a 556

2N5457 MOTOROLA

Abstract: transistor 2N5457
Contextual Info: MMBF5459LT1* M A X IM U M R A T IN G S Rating Drain-Gate Voltage Reverse G ate-Source Voltage Gate C urrent Symbol Value Unit V DG 25 Vdc VGS r > -2 5 Vdc 'G 10 m Adc Symbol Max Unit Pd 225 mW 1.8 mW;"C r o ja 556 c/w T j- Tstq - 55 to + 150 °c CASE 318-07, STYLE 10

BFR30

Abstract: BFR31
Contextual Info: M A X IM U M RATINGS Symbol Value Unit Drain-S ource Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB THERM AL CHARACTERISTICS Characteristic Symbol Max Pd 225 mW Total Device Dissipation FR-5 B oard,*

BFR31

Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Contextual Info: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd

MPF3821

Abstract: MPF3822 PF382
Contextual Info: MPF3821 MPF3822 CASE 29-04, STYLE 5 TO-92 TO-226AA I u ra i MAXIMUM RATINGS Rating Symbol Value Unit V DS 50 V dc D ra in -G a te V o lta g e V DG 50 V dc G a te -S o u rce V o lta g e V GS -5 0 V dc 'D 10 m Adc PD 350 2.8 mW mW C D ra m -S o u rc e V o lta g e

2N7001

Abstract: CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840
Contextual Info: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15

2N7001

Abstract: CTX08-13619 CTX08-13484-X1 Unitrode DN-79 Application of irf840 CTX08-13484 CTX08-13619-X1 UCC3750 transistor jfet 2N5457 1N5818
Contextual Info: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261