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    2N5457 MOTOROLA Datasheets Context Search

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    2N5457 MOTOROLA

    Abstract: 2N5457
    Text: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc


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    PDF 2N5457/D 2N5457 226AA) 2N5457/D* 2N5457 MOTOROLA 2N5457

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


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    PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


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    PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76

    2N7001

    Abstract: CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840
    Text: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15


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    PDF DN-79 UCC3750 UCC3750. CTX08-13484-X1 CTX08-13619-X1 UCC3750N UC3853 2N7001 CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840

    2N7001

    Abstract: CTX08-13619 CTX08-13484-X1 Unitrode DN-79 Application of irf840 CTX08-13484 CTX08-13619-X1 UCC3750 transistor jfet 2N5457 1N5818
    Text: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15


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    PDF DN-79 UCC3750 UCC3750. 2N7001 CTX08-13619 CTX08-13484-X1 Unitrode DN-79 Application of irf840 CTX08-13484 CTX08-13619-X1 transistor jfet 2N5457 1N5818

    NPD5564

    Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
    Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership


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    PDF IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    2N5457 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose 2N5457 N-Channel — Depletion ‘ Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit D ra in -S o u rc e Voltage Vd S 25 Vdc D ra in -G a te Voltage


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    PDF 2N5457/D 2N5457 2N5457 MOTOROLA

    2NS457

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose N-Channel — Depletion 2N5457 1 DRAIN ‘ M otorola Preferred D evice MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating V DS 25 Vdc D rain-Gate Voltage VDG 25 Vdc Vdc Reverse Gate-Source Voltage


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    PDF 2N5457 2NS457

    2N5457 MOTOROLA

    Abstract: 2N5457
    Text: 2N5457* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource Voltage Rating Vd S 25 Vdc Drain-G ate V o ltage vdg 25 Vdc V g SR -2 5 Vdc 'g 10 m A dc Pd 310 2.82 mW mW/°C Tj 125 °C Tstg - 6 5 to +15 0 °C Reverse G ate-Source V o ltage


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    PDF 2N5457* O-226AA) 2N5457 MOTOROLA 2N5457

    2NS457

    Abstract: 2N5457 MOTOROLA 2N5457
    Text: 2N5457* CASE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M R A T IN G S Rating D rain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Vd s 25 Unit Vd c V DG 25 Vd c Vd c V G SR -25 Gate Current IG 10 m A dc Total Device D issipation @ T a = 25°C


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    PDF 2N5457* O-226AA) -10iiAtlc 2NS457 2N5457 MOTOROLA 2N5457

    2N5457 equivalent

    Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
    Text: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C


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    PDF 2N5457* O-226AA) -10iiAtlc 2N5484 2N5486 18-S11g VDG-15Vdc S12fl 20-S21j -S22g 2N5457 equivalent JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461

    2n 5459

    Abstract: 2N5457
    Text: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 | XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting


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    PDF b3b7254 2N5457 2N5459 O-226AA) 2n 5459

    2N5459 MOTOROLA

    Abstract: Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457
    Text: 2N5457 thru 2N5459* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e Vd S 25 Vdc D ra in -G a te V o lta g e Vd G 25 V dc R e verse G a te -S o u rc e V o lta g e V g SR -2 5 V dc G a te C u rre n t 1g 10 m Adc T o ta l D e vice D is s ip a tio n (u T ^ = 25CC


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    PDF 2N5457 2N5459* O-226AA) 2N5459 MOTOROLA Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457

    transistor 2N5457

    Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
    Text: MMBF5459LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Symbol Value Unit Vd G 25 Vdc Vg s W -2 5 Vdc 'g 10 mAdc Symbol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/W TJ. TstH -5 5 to +150 °C CASE 318-07, STYLE 10


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    PDF MMBF5459LT1* OT-23 O-236AB) 2N5457 MMBF5459LT1 transistor 2N5457 jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457

    J203

    Abstract: J202 2N545
    Text: J202 J203 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 40 Vdc D rain-G ate Voltage VDG 40 Vdc G ate-Source Voltage V GS 40 Vdc Gate C urrent 'G 50 mA Total Device D issipa tion (w T^ = 2haC Derate above 25°C


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    PDF O-226AA) 2N5457 J203 J202 2N545

    transistor 2N5457

    Abstract: transistor 6D sot23 MMBF5457LT1
    Text: MMBF5457LT1* M AXIM UM RATIN GS Rating Symbol Value VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GSIrl 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW X r 9JA 556 6C/W Tj- Tstq - 5 5 to +150 ÙC Reverse Gate-Source Voltage Gate Current CASE 318-07, STYLE 10


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    PDF MMBF5457LT1* OT-23 O-236AB) MMBF5457LT1 2N5457 transistor 2N5457 transistor 6D sot23 MMBF5457LT1

    transistor 6D sot23

    Abstract: transistor jfet 2N5457 MMBF5457LT1
    Text: MMBF5457LT1* M A XIM U M RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GS r 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 m w rc Roja 556 °C/W TJ' Tsta - 55 to +150 °C Reverse Gate-Source Voltage Gate Current


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    PDF MMBF5457LT1* OT-23 O-236AB) 2N5457 MMBF5457LT1 transistor 6D sot23 transistor jfet 2N5457 MMBF5457LT1

    2N4221 motorola

    Abstract: 2N4360 MPF3821 2n5270 motorola 2n4360 2N4220 MOTOROLA 2N5465 MOTOROLA 2N4222 motorola 2N5458 motorola 2N5457 MOTOROLA
    Text: FIELD-EFFECT TRANSISTORS continued Low-Frequency/Low-Noise (continued) P-Channel JFETs Re \ ros Re Yfs Package TO 92 t = Device MPF111 (mmho) MIN @ VDS (V) (umho) MAX @ VDS (V') 0.5 10 200 10 c lss c rss V(BR)GSS v (BR)GDO (pF) (MAX) (pF) MAX (V) MIN MIN


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    PDF 2n4360 2n5462 2n5465 n2609 2n5270 mpf111 bf244b/45b bf244c/45c bf256a bf256b 2N4221 motorola MPF3821 motorola 2n4360 2N4220 MOTOROLA 2N5465 MOTOROLA 2N4222 motorola 2N5458 motorola 2N5457 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB TH ER M A L CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C r »j a 556


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    PDF BFR30LT1 BFR31LT1 OT-23 O-236AB) BFR30LT1 BFR30 BFR31

    2N5457 MOTOROLA

    Abstract: transistor 2N5457
    Text: MMBF5459LT1* M A X IM U M R A T IN G S Rating Drain-Gate Voltage Reverse G ate-Source Voltage Gate C urrent Symbol Value Unit V DG 25 Vdc VGS r > -2 5 Vdc 'G 10 m Adc Symbol Max Unit Pd 225 mW 1.8 mW;"C r o ja 556 c/w T j- Tstq - 55 to + 150 °c CASE 318-07, STYLE 10


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    PDF MMBF5459LT1* OT-23 O-236AB) MMBF5459LT1 2N5457 2N5457 MOTOROLA transistor 2N5457

    BFR30

    Abstract: BFR31
    Text: M A X IM U M RATINGS Symbol Value Unit Drain-S ource Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB THERM AL CHARACTERISTICS Characteristic Symbol Max Pd 225 mW Total Device Dissipation FR-5 B oard,*


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    PDF BFR30LT1 BFR31LT1 OT-23 O-236AB) BFR30 BFR31

    BFR31

    Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
    Text: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd


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    PDF BFR30LT1 BFR31LT1 BFR30LT1 BFR31LT1 OT-23 O-236AB) 2N545> BFR30 BFR31 BFR30 BFR31 2N5457 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET

    MPF3821

    Abstract: MPF3822 PF382
    Text: MPF3821 MPF3822 CASE 29-04, STYLE 5 TO-92 TO-226AA I u ra i MAXIMUM RATINGS Rating Symbol Value Unit V DS 50 V dc D ra in -G a te V o lta g e V DG 50 V dc G a te -S o u rce V o lta g e V GS -5 0 V dc 'D 10 m Adc PD 350 2.8 mW mW C D ra m -S o u rc e V o lta g e


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    PDF MPF3821 MPF3822 O-226AA) 2N5457 MPF3822 PF382