2N5457 MOTOROLA
Abstract: 2N5457
Text: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc
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2N5457/D
2N5457
226AA)
2N5457/D*
2N5457 MOTOROLA
2N5457
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2N5457 MOTOROLA
Abstract: 2N5457 equivalent BC237 transistor 2N5457
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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2N5457
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N5457 MOTOROLA
2N5457 equivalent
BC237
transistor 2N5457
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2N4351 MOTOROLA
Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132
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2SK355
IRF241
2SK357
BUZ30
BUZ43A
IRF623
2SK358
BUZ60
2SK382
2N4351 MOTOROLA
MRF966
3SK124
2N3819 MOTOROLA
BFS28
3SK45
BSV81
2N4221 motorola
BC547 MOTOROLA
3SK76
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2N7001
Abstract: CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840
Text: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15
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DN-79
UCC3750
UCC3750.
CTX08-13484-X1
CTX08-13619-X1
UCC3750N
UC3853
2N7001
CTX08-13484-X1
2N5457 MOTOROLA
CTX08
DN-79
CTX08-13619
CTX08-13619-X1
"N-Channel JFET"
irf640
AC TO DC BY irf840
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2N7001
Abstract: CTX08-13619 CTX08-13484-X1 Unitrode DN-79 Application of irf840 CTX08-13484 CTX08-13619-X1 UCC3750 transistor jfet 2N5457 1N5818
Text: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15
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DN-79
UCC3750
UCC3750.
2N7001
CTX08-13619
CTX08-13484-X1
Unitrode DN-79
Application of irf840
CTX08-13484
CTX08-13619-X1
transistor jfet 2N5457
1N5818
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NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
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IntegraU404
LSU405
LSU406
LS841
LS842
LS421
LS422
LS423
LS424
NPD5564
NPD5566
BFY91
IMF3958
2N3050
NF5458
Fairchild E212
MP842
J9100
SST5638
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
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2N5457 MOTOROLA
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N5457/D SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose 2N5457 N-Channel — Depletion ‘ Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit D ra in -S o u rc e Voltage Vd S 25 Vdc D ra in -G a te Voltage
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2N5457/D
2N5457
2N5457 MOTOROLA
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2NS457
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs — General Purpose N-Channel — Depletion 2N5457 1 DRAIN ‘ M otorola Preferred D evice MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating V DS 25 Vdc D rain-Gate Voltage VDG 25 Vdc Vdc Reverse Gate-Source Voltage
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2N5457
2NS457
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2N5457 MOTOROLA
Abstract: 2N5457
Text: 2N5457* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource Voltage Rating Vd S 25 Vdc Drain-G ate V o ltage vdg 25 Vdc V g SR -2 5 Vdc 'g 10 m A dc Pd 310 2.82 mW mW/°C Tj 125 °C Tstg - 6 5 to +15 0 °C Reverse G ate-Source V o ltage
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2N5457*
O-226AA)
2N5457 MOTOROLA
2N5457
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2NS457
Abstract: 2N5457 MOTOROLA 2N5457
Text: 2N5457* CASE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M R A T IN G S Rating D rain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Vd s 25 Unit Vd c V DG 25 Vd c Vd c V G SR -25 Gate Current IG 10 m A dc Total Device D issipation @ T a = 25°C
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2N5457*
O-226AA)
-10iiAtlc
2NS457
2N5457 MOTOROLA
2N5457
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2N5457 equivalent
Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
Text: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C
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2N5457*
O-226AA)
-10iiAtlc
2N5484
2N5486
18-S11g
VDG-15Vdc
S12fl
20-S21j
-S22g
2N5457 equivalent
JFET 2N5457
2N5486 MOTOROLA
2c003
2N5486 equivalent
2n5484 equivalent
2NS457
2N5460
transistor jfet 2N5457
2N5461
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2n 5459
Abstract: 2N5457
Text: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 | XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting
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b3b7254
2N5457
2N5459
O-226AA)
2n 5459
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2N5459 MOTOROLA
Abstract: Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457
Text: 2N5457 thru 2N5459* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e Vd S 25 Vdc D ra in -G a te V o lta g e Vd G 25 V dc R e verse G a te -S o u rc e V o lta g e V g SR -2 5 V dc G a te C u rre n t 1g 10 m Adc T o ta l D e vice D is s ip a tio n (u T ^ = 25CC
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2N5457
2N5459*
O-226AA)
2N5459 MOTOROLA
Motorola 2N5459
2n5459
2N5457 MOTOROLA
2N545
2N5457
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transistor 2N5457
Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
Text: MMBF5459LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Symbol Value Unit Vd G 25 Vdc Vg s W -2 5 Vdc 'g 10 mAdc Symbol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/W TJ. TstH -5 5 to +150 °C CASE 318-07, STYLE 10
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MMBF5459LT1*
OT-23
O-236AB)
2N5457
MMBF5459LT1
transistor 2N5457
jfet transistor
N-Channel JFET transistor
transistor jfet 2N5457
JFET 2N5457
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J203
Abstract: J202 2N545
Text: J202 J203 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 40 Vdc D rain-G ate Voltage VDG 40 Vdc G ate-Source Voltage V GS 40 Vdc Gate C urrent 'G 50 mA Total Device D issipa tion (w T^ = 2haC Derate above 25°C
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O-226AA)
2N5457
J203
J202
2N545
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transistor 2N5457
Abstract: transistor 6D sot23 MMBF5457LT1
Text: MMBF5457LT1* M AXIM UM RATIN GS Rating Symbol Value VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GSIrl 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW X r 9JA 556 6C/W Tj- Tstq - 5 5 to +150 ÙC Reverse Gate-Source Voltage Gate Current CASE 318-07, STYLE 10
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MMBF5457LT1*
OT-23
O-236AB)
MMBF5457LT1
2N5457
transistor 2N5457
transistor 6D sot23
MMBF5457LT1
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transistor 6D sot23
Abstract: transistor jfet 2N5457 MMBF5457LT1
Text: MMBF5457LT1* M A XIM U M RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GS r 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 m w rc Roja 556 °C/W TJ' Tsta - 55 to +150 °C Reverse Gate-Source Voltage Gate Current
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MMBF5457LT1*
OT-23
O-236AB)
2N5457
MMBF5457LT1
transistor 6D sot23
transistor jfet 2N5457
MMBF5457LT1
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2N4221 motorola
Abstract: 2N4360 MPF3821 2n5270 motorola 2n4360 2N4220 MOTOROLA 2N5465 MOTOROLA 2N4222 motorola 2N5458 motorola 2N5457 MOTOROLA
Text: FIELD-EFFECT TRANSISTORS continued Low-Frequency/Low-Noise (continued) P-Channel JFETs Re \ ros Re Yfs Package TO 92 t = Device MPF111 (mmho) MIN @ VDS (V) (umho) MAX @ VDS (V') 0.5 10 200 10 c lss c rss V(BR)GSS v (BR)GDO (pF) (MAX) (pF) MAX (V) MIN MIN
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2n4360
2n5462
2n5465
n2609
2n5270
mpf111
bf244b/45b
bf244c/45c
bf256a
bf256b
2N4221 motorola
MPF3821
motorola 2n4360
2N4220 MOTOROLA
2N5465 MOTOROLA
2N4222 motorola
2N5458 motorola
2N5457 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB TH ER M A L CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C r »j a 556
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BFR30LT1
BFR31LT1
OT-23
O-236AB)
BFR30LT1
BFR30
BFR31
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2N5457 MOTOROLA
Abstract: transistor 2N5457
Text: MMBF5459LT1* M A X IM U M R A T IN G S Rating Drain-Gate Voltage Reverse G ate-Source Voltage Gate C urrent Symbol Value Unit V DG 25 Vdc VGS r > -2 5 Vdc 'G 10 m Adc Symbol Max Unit Pd 225 mW 1.8 mW;"C r o ja 556 c/w T j- Tstq - 55 to + 150 °c CASE 318-07, STYLE 10
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MMBF5459LT1*
OT-23
O-236AB)
MMBF5459LT1
2N5457
2N5457 MOTOROLA
transistor 2N5457
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BFR30
Abstract: BFR31
Text: M A X IM U M RATINGS Symbol Value Unit Drain-S ource Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB THERM AL CHARACTERISTICS Characteristic Symbol Max Pd 225 mW Total Device Dissipation FR-5 B oard,*
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BFR30LT1
BFR31LT1
OT-23
O-236AB)
BFR30
BFR31
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BFR31
Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Text: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd
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BFR30LT1
BFR31LT1
BFR30LT1
BFR31LT1
OT-23
O-236AB)
2N545>
BFR30
BFR31
BFR30
BFR31
2N5457
M2 MARKING SOT23
JFET 2N5457
lp "sot23 marking motorola"
marking M2 JFET
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MPF3821
Abstract: MPF3822 PF382
Text: MPF3821 MPF3822 CASE 29-04, STYLE 5 TO-92 TO-226AA I u ra i MAXIMUM RATINGS Rating Symbol Value Unit V DS 50 V dc D ra in -G a te V o lta g e V DG 50 V dc G a te -S o u rce V o lta g e V GS -5 0 V dc 'D 10 m Adc PD 350 2.8 mW mW C D ra m -S o u rc e V o lta g e
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MPF3821
MPF3822
O-226AA)
2N5457
MPF3822
PF382
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