2N5484 MOTOROLA Search Results

2N5484

Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current

TO-226-AE

Abstract: BC108 characteristic JFET BF245 BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C

2n5484 equivalent

Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G

2N5484

Contextual Info: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current

BFJ 49

Contextual Info: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Drain-Gate V oltage Reverse G a te-Source V oltage Drain Current Forw ard Gate Current Total Device D issip atio n (a T c = 25°C Derate a b o v e 25°C Operating and S to ra g e Ju nction

2N5484

Abstract: 2N5485
Contextual Info: 2N5484 thru 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Rating Symbol Value Unit Vd G 25 Vdc vgsr 25 Vdc 'o 30 m Adc 'G if) 10 m Adc Pd 350 2.8 mW m W ;C TJ. Tslg - 6 5 to +150 ’C Drain-Gate Voltage Reverse Gate-Source Voltage

2n5484

Abstract: 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers 2N 5484 2 N5486 N-Channel — Depletion M AXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T q = 25 C Derate above 25°C

2N5486 MOTOROLA

Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
Contextual Info: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current

4116 2n

Abstract: BFG 99
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC

2N5486 equivalent

Abstract: 2H5484
Contextual Info: 2N 5484 2 N5486 ELECTRICAL CHARACTERISTICS continued {7a = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Input Capacitance (V d s - 15 Vdc, Vq s « 0, f « 1.0 MHz) Characteristic C(ss - - 5.0 PF Reverse Transfer Capacitance {Vq s * 15 Vdc, VGS = 0, f ~ 1.0 MHz)

2N5457 equivalent

Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
Contextual Info: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C

mfe2001

Abstract: 2N5245 MPF112 2N3824 MPF256 2n5247 FET 2N4416 2N3823 MOTOROLA 2N5670 MFE2000
Contextual Info: MOTOROLA SC O I O D E S / O P T O J 34 DF|b3t.7ESS 0030030 5 | 6 3 0 7 2 5 5 M O T O R O L A SC <D I O D E S / O P T O 34C 38038 r-iT-ir FIELD-EFFECT TRANSISTORS DICE continued) 2C4416 die no. LINE SOURCE — DFM146 This die provides performance equal to or better than that of

J305

Abstract: J304 SJ304 JFET HIGH FREQUENCY
Contextual Info: J304 J305 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 D ra in MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating Vd G -3 0 Vdc Gate-Source Voltage vgs -3 0 Vdc 'G 10 mA Pd 350 2.8 mW mW/°C Tl 300 °C T j- Tstg - 65 to +150 °C Gate C urrent Total Device D issipation

jfet transistor

Abstract: MMBF5484LT1
Contextual Info: M A X IM U M R A T IN G S Rating Drain-Gate Voltage Reverse G ate-Source Voltage Forward Gate C urrent Continuous Device D issipation at or Below TC - 2 5 X Linear Derating Factor Storage Channel Tem perature Range Symbol Value Unit V DG 25 Vdc v GS r 25

F245A

Abstract: BF244 BF245 BF245C JFET BF245B BF245 motorola
Contextual Info: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M R A TIN G S Rating Sym bol Value U nit D rain-S ource Voltage VDS ±30 Vdc Dram -G ate Voltage vdg 30 Vdc G ate-Source Voltage vgs 30 Vdc id 100 m Adc

2N5668

Abstract: 2N5670 2N5669 2N5668 motorola
Contextual Info: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Sym bol Value Unit VDS 25 Vdc Vdc Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T a = 25°C

2N5670

Abstract: 2N5668 2N5669
Contextual Info: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Drain-Source Voltage Rating V DS 25 Vdc Drain-Gate Voltage V DG 25 Vdc V GSR 25 Vdc Id 20 m Adc 'G (fl 10 m Adc PD 350 2.8 mW m W °C TStq - 65 to * 150 •c Reverse G ate-Source Voltage

Contextual Info: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS

BF441

Contextual Info: MMBF4416LT1* M AXIM UM RATINGS Rating Symbol Value D rain-Source Voltage V DS 30 Vdc Drain-G ate Voltage V DG 30 Vdc G ate-Source Voltage VG S 30 Vdc 'G 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB U nit ¿ s o u rc e G ate ~ ^ ) TH ERM A L CH A RA C TERISTICS

P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
Contextual Info: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,

Contextual Info: MMBF5486LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit Vd g 25 Vdc VGS r 25 Vdc 'Gif) 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc fi #j a 556 °C/W Tj< T stg - 5 5 to +150 °C CASE 318-07, STYLE 10

BF245

Abstract: BF244 BF244 JFET BF244B JFET BF245 bf245 motorola BF244A BF245A BF245B BF245C
Contextual Info: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) MAXIM UM RATINGS Sym bol V a lu e U n it D rain -S ou rce Voitage VDS ±30 Vdc D rain-G ate Voitage vdg 30 Vdc G ate-S ource Voitage VGS 30 Vdc id 100 m Adc 'G ift

2n5670

Abstract: 2N5668
Contextual Info: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Symbol V a lue Unit D rain-S ource V o ltage Vd S 25 Vdc Drain-G ate Voltage V DG 25 Vdc Reverse G ate-Source V o ltage VGSR 25 Vdc Drain C urrent F orw ard Gate C u rrent Total Device D issipa tion (a TA = 25°C

F245B

Abstract: F245C bf244 F245A jfet bf BF244 JFET JFET BF245 bf245b BF245 motorola
Contextual Info: BF244,A,B,C ^ CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS Sym bol V a lu e U n it D r a in - S o u r c e Voltage vds _!_30 Vdc D r a m - G a t e Voltage vdg 30 Vdc G a te - S o u rc e Voltage