2N5484
Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current
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2N5484/D
2N5484
2N5486
226AA)
2N5484
2N5486 MOTOROLA
2N5486 equivalent
2N5486
2N5484 MOTOROLA
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TO-226-AE
Abstract: BC108 characteristic JFET BF245 BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C
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2N5484
2N5486
226AA)
V218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
TO-226-AE
BC108 characteristic
JFET BF245
BC237
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2N5486 MOTOROLA
Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
Text: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current
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2N54841D
MI-2447
81S521
602-2W609
OW7741
2N5486 MOTOROLA
LMI24
2N5484
2N5484-2N5486
2N5484 MOTOROLA
2N5486
S229
2n5484 equivalent
S119
S219
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2n5484 equivalent
Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G
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2N5484/D
O-226AA)
2n5484 equivalent
2N5486 MOTOROLA
2N5484
2N5486
2N5484 characteristics
2N5486 equivalent
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2N5484
Abstract: No abstract text available
Text: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current
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2N5484
2N5486*
O-226AA)
b3b7254
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BFJ 49
Abstract: No abstract text available
Text: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Drain-Gate V oltage Reverse G a te-Source V oltage Drain Current Forw ard Gate Current Total Device D issip atio n (a T c = 25°C Derate a b o v e 25°C Operating and S to ra g e Ju nction
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2N5484
2N5486*
O-226AA)
2N5486
BFJ 49
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2N5484
Abstract: 2N5485
Text: 2N5484 thru 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Rating Symbol Value Unit Vd G 25 Vdc vgsr 25 Vdc 'o 30 m Adc 'G if) 10 m Adc Pd 350 2.8 mW m W ;C TJ. Tslg - 6 5 to +150 ’C Drain-Gate Voltage Reverse Gate-Source Voltage
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N5484
N5486
O-226AA)
2N5484
2N5486
2N5485
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2n5484
Abstract: 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers 2N 5484 2 N5486 N-Channel — Depletion M AXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T q = 25 C Derate above 25°C
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N5486
100-C)
2N5484
2N5486
L3L7255
37fifl
2n5486
2n5484 equivalent
2n5484 jfet
2N5486 equivalent
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4116 2n
Abstract: BFG 99
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC
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2N5484
2N9486
4116 2n
BFG 99
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2N5486 equivalent
Abstract: 2H5484
Text: 2N 5484 2 N5486 ELECTRICAL CHARACTERISTICS continued {7a = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Input Capacitance (V d s - 15 Vdc, Vq s « 0, f « 1.0 MHz) Characteristic C(ss - - 5.0 PF Reverse Transfer Capacitance {Vq s * 15 Vdc, VGS = 0, f ~ 1.0 MHz)
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N5486
2N5484
2N5486
2N5486 equivalent
2H5484
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2N5457 equivalent
Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
Text: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C
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2N5457*
O-226AA)
-10iiAtlc
2N5484
2N5486
18-S11g
VDG-15Vdc
S12fl
20-S21j
-S22g
2N5457 equivalent
JFET 2N5457
2N5486 MOTOROLA
2c003
2N5486 equivalent
2n5484 equivalent
2NS457
2N5460
transistor jfet 2N5457
2N5461
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mfe2001
Abstract: 2N5245 MPF112 2N3824 MPF256 2n5247 FET 2N4416 2N3823 MOTOROLA 2N5670 MFE2000
Text: MOTOROLA SC O I O D E S / O P T O J 34 DF|b3t.7ESS 0030030 5 | 6 3 0 7 2 5 5 M O T O R O L A SC <D I O D E S / O P T O 34C 38038 r-iT-ir FIELD-EFFECT TRANSISTORS DICE continued) 2C4416 die no. LINE SOURCE — DFM146 This die provides performance equal to or better than that of
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DFM146
2N3823
2N3824
2N3966
2N4223
2N4224
2N4416
2N5245
2N5246
2N5247
mfe2001
MPF112
MPF256
FET 2N4416
2N3823 MOTOROLA
2N5670
MFE2000
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J305
Abstract: J304 SJ304 JFET HIGH FREQUENCY
Text: J304 J305 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 D ra in MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating Vd G -3 0 Vdc Gate-Source Voltage vgs -3 0 Vdc 'G 10 mA Pd 350 2.8 mW mW/°C Tl 300 °C T j- Tstg - 65 to +150 °C Gate C urrent Total Device D issipation
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O-226AA)
2N5484
J305
J304
SJ304
JFET HIGH FREQUENCY
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jfet transistor
Abstract: MMBF5484LT1
Text: M A X IM U M R A T IN G S Rating Drain-Gate Voltage Reverse G ate-Source Voltage Forward Gate C urrent Continuous Device D issipation at or Below TC - 2 5 X Linear Derating Factor Storage Channel Tem perature Range Symbol Value Unit V DG 25 Vdc v GS r 25
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MMBF5484LT1
MMBF5484LT1*
OT-23
O-236AB)
jfet transistor
MMBF5484LT1
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F245A
Abstract: BF244 BF245 BF245C JFET BF245B BF245 motorola
Text: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M R A TIN G S Rating Sym bol Value U nit D rain-S ource Voltage VDS ±30 Vdc Dram -G ate Voltage vdg 30 Vdc G ate-Source Voltage vgs 30 Vdc id 100 m Adc
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BF244A
O-226AA)
BF245
2N5484
BF245,
BF244,
F245A
BF244
BF245C JFET
BF245B
BF245 motorola
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2N5668
Abstract: 2N5670 2N5669 2N5668 motorola
Text: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Sym bol Value Unit VDS 25 Vdc Vdc Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T a = 25°C
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2N5668
2N5670
O-226AA)
2N5484
100cteristic
b3b7S54
0I03q3g
2N5668
2N5670
2N5669
2N5668 motorola
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2N5670
Abstract: 2N5668 2N5669
Text: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Drain-Source Voltage Rating V DS 25 Vdc Drain-Gate Voltage V DG 25 Vdc V GSR 25 Vdc Id 20 m Adc 'G (fl 10 m Adc PD 350 2.8 mW m W °C TStq - 65 to * 150 •c Reverse G ate-Source Voltage
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2N5668
2N5670
O-226AA)
2N5484
2N5670
2N5669
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Untitled
Abstract: No abstract text available
Text: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS
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MMBF4416LT1*
OT-23
O-236AB)
2N5484
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BF441
Abstract: No abstract text available
Text: MMBF4416LT1* M AXIM UM RATINGS Rating Symbol Value D rain-Source Voltage V DS 30 Vdc Drain-G ate Voltage V DG 30 Vdc G ate-Source Voltage VG S 30 Vdc 'G 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB U nit ¿ s o u rc e G ate ~ ^ ) TH ERM A L CH A RA C TERISTICS
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MMBF4416LT1*
OT-23
O-236AB)
BF4416LT1
BF441
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P-Channel Depletion Mosfets
Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,
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2N5486
2N4416
2N4416A
2N5245
3N128*
P-Channel Depletion Mosfets
mosfet 2N3796
2N3797
2N3796
MFE825
MFE3002
P-Channel Depletion Mosfet
depletion mode mosfet 100 MHz
MFE3003
N5484
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Untitled
Abstract: No abstract text available
Text: MMBF5486LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit Vd g 25 Vdc VGS r 25 Vdc 'Gif) 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc fi #j a 556 °C/W Tj< T stg - 5 5 to +150 °C CASE 318-07, STYLE 10
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MMBF5486LT1*
OT-23
O-236AB)
2N5484
MMBF5486LT1
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BF245
Abstract: BF244 BF244 JFET BF244B JFET BF245 bf245 motorola BF244A BF245A BF245B BF245C
Text: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) MAXIM UM RATINGS Sym bol V a lu e U n it D rain -S ou rce Voitage VDS ±30 Vdc D rain-G ate Voitage vdg 30 Vdc G ate-S ource Voitage VGS 30 Vdc id 100 m Adc 'G ift
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BF244A
O-226AA)
BF245
2N54S4
BF245,
BF244,
BF244
BF244 JFET
BF244B
JFET BF245
bf245 motorola
BF245A
BF245B
BF245C
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2n5670
Abstract: 2N5668
Text: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Symbol V a lue Unit D rain-S ource V o ltage Vd S 25 Vdc Drain-G ate Voltage V DG 25 Vdc Reverse G ate-Source V o ltage VGSR 25 Vdc Drain C urrent F orw ard Gate C u rrent Total Device D issipa tion (a TA = 25°C
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2N5668
2N5670
O-226AA)
2N5484
2n5670
2N5668
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F245B
Abstract: F245C bf244 F245A jfet bf BF244 JFET JFET BF245 bf245b BF245 motorola
Text: BF244,A,B,C ^ CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS Sym bol V a lu e U n it D r a in - S o u r c e Voltage vds _!_30 Vdc D r a m - G a t e Voltage vdg 30 Vdc G a te - S o u rc e Voltage
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BF244
O-226AA)
BF245
2N5484
F245B
F245C
F245A
jfet bf
BF244 JFET
JFET BF245
bf245b
BF245 motorola
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