2N5551 FAIRCHILD Search Results
2N5551 FAIRCHILD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
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2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551 | |
Contextual Info: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) |
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2N5551 MMBT5551 2N5551 OT-23 | |
2N5551 fairchild
Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
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2N5551 MMBT5551 2N5551 OT-23 2N5551 fairchild 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197 | |
2N5551 SOT23
Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
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2N5551- MMBT5551 2N5551 OT-23 MMBT5551 2N5551 SOT23 2N5551 circuit 2N5551 2N5551 fairchild | |
2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
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2N5551 MMBT5551 2N5551 OT-23 BF242 CBVK741B019 F63TNR MMBT5551 PN2222N | |
2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
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2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23 | |
2n5551
Abstract: 2N5551 SOT23 MMBT5551
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2N5551 MMBT5551 2N5551 OT-23 2N5551 SOT23 MMBT5551 | |
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol |
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2N5551 MMBT5551 2N5551 OT-23 | |
2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
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2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551 | |
2n5551
Abstract: 2N5551 SOT23
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2N5551 MMBT5551 2N5551 OT-23 2N5551TA 2N5551TFR 2N5551TF 2N5551BU 2N5551 SOT23 | |
BF242Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol |
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2N5551 MMBT5551 2N5551 OT-23 OT-23 BF242 | |
2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
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2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU | |
2n4410Contextual Info: SEMICONDUCTOR • 2N4410 . TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS |
OCR Scan |
2N4410 2N5551 2n4410 | |
2N5830
Abstract: transistor 2N5830 2N5551 npn general purpose high voltage amplifier
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2N5830 2N5551 2N5830 transistor 2N5830 npn general purpose high voltage amplifier | |
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MPSL01
Abstract: npn general purpose high voltage amplifier npn general purpose amplifier 2N5551
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MPSL01 2N5551 MPSL01 npn general purpose high voltage amplifier npn general purpose amplifier | |
MPSL01
Abstract: transistor 2001 H1 2N5551 CBVK741B019 F63TNR PN2222N
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MPSL01 2N5551 MPSL01 transistor 2001 H1 CBVK741B019 F63TNR PN2222N | |
2N4410
Abstract: 2N4410 Transistor 2N5551
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2N4410 2N5551 2N4410 2N4410 Transistor | |
2N4410Contextual Info: SEMICONDUCTOR ¡m 2N4410 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS |
OCR Scan |
2N4410 2N5551 2N4410 | |
Contextual Info: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSL01 NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. |
OCR Scan |
MPSL01 2N5551 | |
2N4410
Abstract: 2N5551 CBVK741B019 F63TNR PN2222N to92 lead code d
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2N4410 2N5551 2N4410 CBVK741B019 F63TNR PN2222N to92 lead code d | |
Contextual Info: S g M iS D r o U C roR :w 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum RatinQS TA = 25°C unless otherwise noted |
OCR Scan |
2N5551 MMBT5551 2N5551 | |
Contextual Info: SEM ICONDUCTOR i 2N5830 . TO-92 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted |
OCR Scan |
2N5830 2N5551 impaire10 | |
transistor equivalent 2n5551
Abstract: 2N5551 circuit tnr* G series 2N5551 CBVK741B019 F63TNR MPSL01 PN2222N
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MPSL01 2N5551 transistor equivalent 2n5551 2N5551 circuit tnr* G series CBVK741B019 F63TNR MPSL01 PN2222N | |
Contextual Info: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted |
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2N4410 2N5551 |