2N594 Search Results

2N5945

Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
Contextual Info: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*

Contextual Info: 2N5941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5946 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)37# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)15

Contextual Info: 2N5947 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)16 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition)20

motorola transistor cross reference

Abstract: 75u50 2N5947 Motorola 31-00 MM8012 motorola diode cross reference mm-8012 VHF RF AMPLIFLER noise diode noise diode generator
Contextual Info: D E I t,3 b ? 2 S 4 D 0 7 ötiD? t. "|“ MOTOROLA SC -CXSTRS/R F> f ï MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N5947 T h e R F L in e H IG H F R E Q U E N C Y T R A N SIS T O R N P N S IL IC O N NPN S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R

2N5943

Abstract: MXR5943
Contextual Info: MOTOROLA SC -CXSTRS/R 0 T | t,3 b 7 E S M F> 6367254 MOTOROLA SC 8 9 0 79461 XSTRS/R F DDTTmal T D - p - 3 / '£ 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MXR5943 Die Source Sam e as 2N5943 RF TRANSISTOR NPN SILICON M A X IM U M RATINGS Sym bol

Contextual Info: 2N594 Bidirectional Transistor 16.00 Transistors Miscellaneous Transist. 1 of 2 Home Part Number: 2N594 Online Store 2N594 Diodes Bidirec t io nal Trans is t o r Transistors Enter code INTER3 at checkout.*

vk200* FERROXCUBE

Abstract: 2n5946 2N5944 ZN5946 2N5946 MOTOROLA 2N5945 Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The R F Line 2.0, 4.0, 10 W - 470 MHz RF POWER TRANSISTO RS NPN SILICO N RF POWER TRANSISTO RS NPN SILICON . . . designed fo r 7 .0 to 15 V o lts , U H F large signal a m p lifie r app lica tio n s req u ire d in in d u s tria l and c o m m e rc ia l FM e q u ip m e n t op e ra tin g

2N5945

Contextual Info: 2N5945 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5945 is Designed for FM Land Mobile Applications in the 400 to 960 MHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz • Omnigold Metalization System

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

2N5939

Abstract: 74222 2N5940
Contextual Info: TYPES 2N5939, 2N5940 N-P-N SILICON POWER TRANSISTORS R A D IA T IO N -T O L E R A N T TRAN SISTO RS FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S Formerly T IX P 3 9 , T IX P 4 0 of Min hFE of 10 at 4 V , 5 A after 1 X 10 14 Fast Neutrons/cm2

Contextual Info: 2N5945 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)800m Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)15

2N4004

Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665

2N5943 equivalent

Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Contextual Info: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low

2N5943

Contextual Info: 2N5943 Bipolar NPN UHF/Microwave Transisitor 15.00 Transistors U. 1 of 1 Home Part Number: 2N5943 Online Store 2N5943 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

BA101D

Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542

2N5942

Abstract: transistor t04 66 transistor T04 T04 transistor S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 transistor 3055
Contextual Info: 2N5942 SILICON NPN VHF POWER TRANSISTOR 80 W P.E.P. S IN G L E S ID E B O A R D T R A N S IS TO R mechanical data DIA 4 L absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .65 V

2N5949

Abstract: 2n5961
Contextual Info: TYPES 2N5949 THRU 2N5953 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 3 3 8 . A P R IL 1 9 7 0 SILECTt FIELD-EFFECT TRANSISTORS^ • Narrow IDSS and VQS{off Ranges • For Low-Noise Audio-Frequency Amplifier Applications

Contextual Info: 2N5944 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)15

Contextual Info: 2N5942 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)12 Absolute Max. Power Diss. (W)140# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON

2N5951

Abstract: 2N5952 2n5949 2n599 Variable resistor 50K ohm 100MHZ 2N59 2N5950 2N5953
Contextual Info: Datasheet 2N5949 2N5950 2N5951 2N5952 2N5953 W GiKv U 1 Sem iconductor Cora. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N-CHANNEL FET T0-92-18R CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION

Contextual Info: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C O O O O O TJ

Contextual Info: MOTOROLA SC X S T R S / R F MOTOROLA 4bE D • b 3 b ? 25 4 0 01 S0b 3 0 ■ flOTb T ~ 3 l "33 ■i SEMICONDUCTOR - - - TECHNICAL DATA M RF5943 The RF Lin« DIE SO U RCE SAM E A S 2N5943 NPN Silico n High Frequency Transisto r