2N637 Search Results

2n5955

Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
Contextual Info: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching

2N6378

Abstract: 2N6379 2N6274 2N6377 MR850
Contextual Info: MOTOROLA Order this document by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit

Delco

Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

2N1011

Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136

2N6254

Abstract: 2N6253 2n6371 e978
Contextual Info: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.

2N6377

Abstract: 2N6378 2N6379 2N637
Contextual Info: MOTOROLA xstrs/ r sc 12E 0 § f b3b?2S4 Q0fi4b3fc. T | • f- 3 0 '2 3 2N6377 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N6379 HIGH-POWER PNP SILICON TRANSISTORS . . . designed for use in industrial-military power amplifier and switching circuit applications.

Contextual Info: Il 2N6371HV 2N6371HV NPN POWER TRANSISTOR High-fidelity Amplifier and Power Switching Circuit Applications DIM A B MIN - C 6,35 D 0 ,9 6 E F G H J K L 29,90 10,69 5.20 M 3,84 1 6 ,6 4 11,15 - ABSOLUTE MAXIMUM RATINGS C ollector-base voltage open em itter

2N5034 package

Abstract: 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

2N6371

Contextual Info: JMnic Product Specification 2N6371 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation capability ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers

2N6254

Abstract: 2N6253 2n6371 IC16 Packages 1
Contextual Info: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.

2N6371

Abstract: 2N6254
Contextual Info: 2N6253, 2N6254, 2N6371 CDÎL 2N6253, 6254, 6371 NPN POWER TRANSISTORS High-fidelity Amplifier and Power Switching Circuit Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 — - 6.35 0,96 - 29,90

2n6371

Contextual Info: SavantIC Semiconductor Product Specification 2N6371 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High dissipation capability ·Excellent safe operating area APPLICATIONS ·Series and shunt regulators ·High-fidelity amplifiers

65k5

Abstract: 2N637 1B12A 100SS 2N5955 2N6373 npn 100n 1a transistor 2N5956 100OE 2N5954
Contextual Info: Ceiifm l sem iconductor Corp. Central Sem iconductor Corp. 1 4 5 Adam s Avenue Hauppauge, New York 11 7 8 8 DESCRIPTI0N The CENTRAL SEMICONDUCTOR 2N5954, 2N6372 series types are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed

2SA70

Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit

RCA 40251

Abstract: rca 2n6254 2N3055H RCA 40251 2N3055H 2N6254 2N6253 2n6254 rca 2N6371 S 40251
Contextual Info: SEMELAB UIIHB POWER TR A N S ISTO R S 2N3055H, 2 N 6 2 5 3 , 2N 6254, 2N6371, 40251 H o m e ta x ia l-B a s e High-Power Silicon N -P -N Transistors • 2 N 6 2 5 4 : prem ium type fro m 2 N 3 0 5 5H Rugged, Broadly Applicable Devices For Industrial and Commercial Use

2N6372

Abstract: 2N6373 2N6374
Contextual Info: SavantIC Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications

2N6373

Contextual Info: 2N6373 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6379

Abstract: FF 030 PK
Contextual Info: MOTOROLA Order this document by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors ‘ M otorola Preferred Device . . . designed for use in industrial-m ilitary power amplifier and switching circuit applications. • • • •

2N6374

Abstract: 2N6372 2N6373
Contextual Info: Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications

2N5955

Abstract: 2N5954 2N5956
Contextual Info: Inchange Semiconductor Product Specification 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area ・Complement to type 2N6372/6373/6374 APPLICATIONS ・Designed for driver circuits,switching

2N6583

Abstract: 2N6736
Contextual Info: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469

2n6254

Abstract: rca 2n6254 2N6371 2N6253 2n6254 rca ITT 2201 i944
Contextual Info: P ow er Transistors File N um b er HARRIS 2N6253, 2N6254, 2N6371 1077 SEMICOND SECTOR 27E D H 4302571 DDLTIhS T *HAS T - 3 3 -1 3 High-Power Silicon N-P-N Transistors For Industrial and C om m ercial Use Features: • Maxim um safe-area-of-operation curves

2N5954

Abstract: 2N5956 2N5955 2N6372 2N6373 2N6374
Contextual Info: 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base

Contextual Info: ucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 A , A, POWER CONVERTER TRANSISTORS 2N637, 2N637A, and 2N637B are a series of high gain transistors especially designed as high current switching