2N6715 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

2N6715

Abstract: MPS6715 HOTS
Contextual Info: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

2N6715

Contextual Info: 2N6715 SILICON NPN TRANSISTOR PACKAGE STYLE TO-237 DESCRIPTION: The 2N6715 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS IC 2.0 A VCE 40 V PDISS 2.0 W @ TC = 25 OC 0.85 W @ TA = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6715

Contextual Info: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

2N6715

Abstract: 2N6714 2N6716
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. E 1 = EMITTER 2 = BASE

Contextual Info: 2N6715 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0

2N6714

Abstract: 2N6715
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715

2sc498

Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

2N6726

Abstract: 2N6714 2N6727 SE192 TRANSITON
Contextual Info: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N

2N671A

Abstract: 2N671 2N6727 2n671 transistor 2N6715 2N6726 TRANSISTOR 726 2N6714
Contextual Info: Datasheet Central 2N6714 2N6726 Semiconductor Corp. 2N6715 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60

2N6716

Abstract: 2N6714 2N6715 2n6715 datasheet 6716
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package Boca Semiconductor Corp. BSC http://www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N6715

Contextual Info: 2N6715/PN6715/MPS6715 Z W A H ü National Semiconductor 2N6715 M / PN6715 T0" 257 J u B„ C MPS6715 ify T0" 92 B Z *C T L /Q /1 0 1 0 0 -8 TO• 226AE UU Bc T l/G /1 0 1 0 0 -1 T L /G /1 0 1 0 0 -4 N P N G e n e r a l P u r p o s e A m p lifie r E l e c t r ic a l C h a r a c t e r i s t i c s ta = 25°c unless otherwise noted

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Power Transistors TO-237 Case O Z TYPE ic PD BVCBO BVCEO @ Ic hFE VCE SAT @ IC fT * bv Ce s (A) NPN PNP (W) MAX (mA) (V) (V) MIN MIN MIN MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000

2sc1175

Abstract: 2SC875 2N6728 2SA606 2N6714 2SA532 2SA532 complementary 2sa708 2N6428 2N6715
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY CASE Pd IC mW (A) VCE(sat) HFE MAXIMUM RATINGS IC VCEO VCE (V) min max (mA) (V) . fT Cob COMPLE­ min max MENTARY (V) (A) (MHz) (PF> TYPE max 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

Contextual Info: m 2N6715 \ \ SILICON NPN TRANSISTOR P A C K A G E S T Y L E T O -2 3 7 9.020 0.508 TYP. NOM. 0.108 D E S C R IP T IO N : 0.205-0.195 J (5.207-4.953) 0.185 0.175 u Mr ^ The 2 N 6 7 1 5 is Designed for General Purpose Amplifier, and Switching Applications.

2n6717

Abstract: 2N6715 2N6716 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: I ^ m mHK• mmmm ■ m m mamm M axim um R a tin g s Type No. 2N6715 2N6716 ^œo V Min 50 60 E le c tric a l C h a ra c te ris tic s (Ta=25°C, U n le s s O th erw ise Specified) ^CM w ^C8 (A) (A) (ma) Max (V) Min (W) @Tc=25°c 'c (V) Min 40 5 0.75 1.5 0.1

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

2N6715

Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
Contextual Info: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735

2N6714

Abstract: 2N6715 DSA0037489 DSA003748
Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO

T0-226AE

Abstract: 2N6717
Contextual Info: 2N6715/MPS6715 0 1 National JSfl Semiconductor 2N6717 r M/ U MPS6717 TO-237 T L /G /1 0 1 0 0 -8 ////// T0- 226AE '•f T L /G /1 0 1 0 0 -4 NPN General Purpose Amplifier Electrical Characteristics t a = 25°c unless otherwise noted Symbol Parameter Min Max