2N6725 Search Results

Contextual Info: Not Recommended for New Design Please Use ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

2N6724

Abstract: 2N6725
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO

2N6724

Contextual Info: 2N6724 2N6725 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * 50 Volt V CE0 * Gain of 15k at lc = 0.5 A m p * Ptot=1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 - MARCH 94_ FEATURES * 50 Volt V,CEO Gain of 15k at lc = 0.5 Amp P,o«=1 Watt E E-Une T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

2N6724

Abstract: 2N6725 MPS6724 MPS6725
Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 NATL SEMICOND H E DISCRETE D I t,5 0 1 1 3 0 00372^4 t | T-33-Z9 - National Semiconductor MPS6724 MPS6725 2N6724 2N6725 NPN Darlington Transistor Electrical Characteristics T a = 25°C unless otherwise noted Min P aram eter S ym b o l

2n6700

Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA

Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 NATL SEMI COND DISCRET E HE D J bSOllBO 00372^4 b £K1 National át¡á Semiconductor 2N6724 2N6725 f MPS6724 MPS6725 TO-237 4 TL/G/10100-8 W II TO-226AE V TL/G/10100-4 NPN Darlington T ra n sisto r Electrical C h a ra cte ristics

2N6724

Abstract: 2N6725 MPS8724
Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 National Semiconductor 2N6724 2N6725 MPS6724 MPS6725 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CES v (BR)CBO V(BR)EBO 'CBO 'e bo

D40K2

Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
Contextual Info: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000

T0-202

Abstract: 2n6549
Contextual Info: bflE D Devices Volts Mtn 100 NPN 2N7051 PNP h « @ lc lc Max (Amps) Min 1 20,000 2N7053 1 2N6725 1 mA mA ma 100 1.4 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 15,000 500 1.5 1A 2mA 100 Max 20,000 20,000 P o (A n k) Package TO-92(94) (Watts)

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

Contextual Info: 2N6724 2N6725 w w w. c e n t r a l s e m i . c o m SILICON NPN DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER

LG 631 IC

Abstract: ic lg 631 2N6725 2n6724 2n6725a
Contextual Info: Datasheet Central _ _ h 2N6724 tm 2N6725 NPN SI L I CON DARLINGTON POWER TRANSISTOR ic o n a u c iO i 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 2 3 7 CASE (EBC) Manufacturers of World Class Discrete Semiconductors

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

D40C1

Abstract: D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3
Contextual Info: Small Signal Darlington Transistors hFE Part No. and Polarity V CEO NPN @ V CE & IC Operating Temperature: -55 o C to 150oC fT VCE sat & VBE(sat) @ IC & IB @ V CE & IC IC PNP Package Min. Max. VCE IC Max. Max. IC IB Min. Outline (Max. in mm or inches) Typ.

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

bvc49

Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)