2N7219 Search Results

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, 2N7219, 2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

Contextual Info: 2N7219+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

Contextual Info: 2N7219 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

Contextual Info: 2N7219+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

S18A

Contextual Info: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available

2N7218

Abstract: LD20A
Contextual Info: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V T h r u 500V. N - C h a n n e l E n h a n c e m e n t Mo d e . M O S F E T P o w e r Tr a n s i s t o r FEATURES • • • • Isolated Hermetic Metal Package Fast Switching

2N7219

Abstract: IRFM240
Contextual Info: IRFM240 2N7219 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VDSS ID(cont) RDS(on) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

Contextual Info: 2N7219U Transistors N-Channel JFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)14 I(G) Max. (A) Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V)2.0 I(DSS) Max. (A)

TRANSISTOR PEC 545

Abstract: 2N7221 transistor 2Fn 1256C 2N7218 2N7219 2N7222
Contextual Info: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Ceramic Feedthroughs Available

2N6801LCC6

Contextual Info: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

2N7219U

Abstract: 2N7218U 2N7221 2N7221U 2N7219U JANTX 2N7218 2N7219 2N7222 2N7222U 2N7219 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 July 2009. MIL-PRF-19500/596J 14 April 2009 SUPERSEDING MIL-PRF-19500/596H 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

F0011

Contextual Info: SFF240J SFF240JR Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ 15 AMP, 200 Volts, 0.18 Ω

PD9555

Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM 240 SN7S19 JANTXSN7S19 JANTXVSN7S19 [REF: MIL-S-1S500/596] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET11 technology ¡s the key to International

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

2N7219

Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 2N7219 "‘ 2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

2sc 1364 transistor

Abstract: LS 1316 0/2sc 1364 transistor
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS4G 2IM7219 2N7219 JANTXVSN7S1S N-CHANNEL [REF: MIL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998