2N7219 JANTX Search Results

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

Contextual Info: 2N7219+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

Contextual Info: 2N7219+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55

PD9555

Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM 240 SN7S19 JANTXSN7S19 JANTXVSN7S19 [REF: MIL-S-1S500/596] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET11 technology ¡s the key to International

2N7219

Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

2sc 1364 transistor

Abstract: LS 1316 0/2sc 1364 transistor
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS4G 2IM7219 2N7219 JANTXVSN7S1S N-CHANNEL [REF: MIL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

2N7219U

Abstract: 2N7218U 2N7221 2N7221U 2N7219U JANTX 2N7218 2N7219 2N7222 2N7222U 2N7219 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 July 2009. MIL-PRF-19500/596J 14 April 2009 SUPERSEDING MIL-PRF-19500/596H 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

2N7219U JANTX

Abstract: 2N7219U 2N7221U mos die 2N7218 2N7218U 2N7219 2N7221 2N7222 2N7222U
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 November 2002. MIL-PRF-19500/596E 14 August 2002 SUPERSEDING MIL-PRF-19500/596D 13 September 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

406J

Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for