JANTXV2N7219 Search Results

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

Contextual Info: k> Part Number b vdss RDS on (V) (Q T r=25°C (A) Tf=100°C MA) Pd @ Tr = 25°C m Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs SMD-1 JA N TXV2N 72 !8U 100 .07? 28 20 125 JANTXV2N7219U 904 Ki» 1121 200 .18 18 11 125 90555

2N7219

Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

JANTXV2N7219U

Abstract: IRF 450 MOSFET IRFN240 JANTX2N7219U smd-1
Contextual Info: PD - 91548C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN240 JANTX2N7219U JANTXV2N7219U REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91548C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN240 JANTX2N7219U JANTXV2N7219U REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

Contextual Info: SCF2N7219T1 JANTX2N7219 JANTXV2N7219 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/596 • N-Channel  200 Volt  < 0.180 Ohms  18 Amp TO-254AA DESCRIPTION SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

IRF 450 MOSFET

Abstract: IRFM240 JANTX2N7219 JANTXV2N7219
Contextual Info: PD - 90555D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

diode.18

Abstract: IRF 450 MOSFET IRFM240 JANTX2N7219 JANTXV2N7219 A1276 90555
Contextual Info: PD - 90555E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 90555E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3