2SA165 Search Results

2SC4369

Abstract: 2SA1658
Contextual Info: JMnic Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SA1651

Abstract: B03A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1651 S ilic o n PNP P o w e r T ra n s is to rs D E S C R IP T IO N • W ith T 0 2 2 0 F a package • Fast switching speed • Low collector saturation voltage A P P L IC A T IO N S • For use in switching power supplies,D C -D C

2SA1659

Abstract: 2SA1659A 2sc4370
Contextual Info: Product Specification www.jmnic.com 2SA1659 2SA1659A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4370/4370A ・High transition frequency fT APPLICATIONS ・High voltage applications PINNING PIN DESCRIPTION 1 Base

2SC4361

Abstract: 2SA1654
Contextual Info: O rdering number ; EN 2 8 0 7 2SA1654/2SC4361 « P N P / N P N E p i t a x i a l P l a n a r Silicon T r a n s i s t o r s SA W O o. Sw itching A pplications w ith Bias/Resistance i A pplications * Switching circuit, inverter circuit, interface circuit, driver circuit

2SA1658

Abstract: 2SC4369
Contextual Info: SavantIC Semiconductor Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4369 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SA1659

Abstract: 2SC4370
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION •High Collector-Emitter Breakdown Voltage VCEO= -160V Min ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.

2SC4363

Abstract: 2SA1656
Contextual Info: O rdering n u m b e r:EN2 8 0 9 2SA1656/2SC4363 i P N P / N P N E pitax ial P l a n a r Silicon T ra n sis to rs Switching Applications with Bias, Resistance i w## Applications S|f * Switching circuit, inverter circuit, interface circuit» driver circuit

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

2SA1650

Abstract: transistor 7929
Contextual Info: V U = 3 > / \ ° '7 - h 7 > v 7 $ Silicon Pow er Transisto r 2SA1650 nmm 2SA 1650& , Ü i S ^ ' f •I S S I S I fâ jR W Œ ^ ttC / J v S < £ 3 ÿ>v7.$?t0 ï- ÿ F 7 'f ^ , ü ffi : m m K a ”7 - h vïX/MM, DC-DC=i> / < - * , V U / - f h 'K 7 - f * « > 1 X - f- y ? >

2SA1652

Abstract: C11531E BOOKS FOR ALL IC
Contextual Info: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6$ 313 6,/,&21 (3,7$;,$/ 75$16,6725 25 +,*+63(' 6:,7&+,1* The 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching and features a very low collector-to-emitter saturation.

Contextual Info: Ordering number : EN 2809 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1656/2SC4363 Switching Applications with Bias Resistance

Contextual Info: 2SA1657 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V) I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)500m

2SC4370

Abstract: 15 A PNP POWER TRANSISTOR 2SA1659 silicon pnp transistor SILICON PNP POWER TRANSISTOR PNP TRANSISTOR datasheet HIGH VOLTAGE PNP POWER TRANSISTOR SILICON PNP HIGH POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION •High Collector-Emitter Breakdown Voltage VCEO= -160V Min ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.

New Jersey Semiconductor

Abstract: 2sc4369
Contextual Info: ^£.m.L-don.du.ctoi Lpioducti, One., TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SC4369 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package •Complement to type 2SA1658 •Good linearity of hFE

2SA1651

Contextual Info: SavantIC Semiconductor Product Specification 2SA1651 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers,

2SC4368

Abstract: 2SA1657 transistor 2sa1657 2sa165
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION •Collector-Emitter Breakdown Voltage VCEO= -150V Min ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting.

2SC4370

Abstract: 2SA1659
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION •High Collector-Emitter Breakdown Voltage VCEO= 160V Min ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting.

2SC4369

Abstract: 2SA1658
Contextual Info: Inchange Semiconductor Product Specification 2SC4369 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2

Contextual Info: Ordering number: EN 2807 2SA1654/2SC43B1 PNP/NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance A pp licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s • On-chip bias resistance (R1 = 4.7k£i, R2 = lOkfl)

2SA1651

Abstract: 2sa165 PNP 100V 2A
Contextual Info: Inchange Semiconductor Product Specification 2SA1651 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers,

NEC semiconductor

Abstract: 2SA1650 C11531E
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter saturation.

2SA1658

Abstract: 2SC4369
Contextual Info: JMnic Product Specification 2SA1658 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4369 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SA1651

Contextual Info: JMnic Product Specification 2SA1651 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers,

2SA1659

Abstract: 2SA1659A 4370a
Contextual Info: JMnic Product Specification 2SA1659 2SA1659A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4370/4370A ・High transition frequency fT APPLICATIONS ・High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector