2SA178 Search Results

2SC4645

Abstract: 2SA1785
Contextual Info: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)

Contextual Info: Ordering number : ENN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).

2SA1784

Abstract: 2SA1781
Contextual Info: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

2SA1598

Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
Contextual Info: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft

Contextual Info: Ordering number : EN 3520 i _ 2SA1784/2SC4644 No.3520 >' + 1 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P lanar Silicon Transistor SAiYO High Voltage Driver Applications F e a tu re s • Adoption of MBIT process •High breakdown voltage Vceo —400V

Contextual Info: Ordering number: EN 3581 2SA1787/2SC4650 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display _ Video Output Applications Features •High breakdown voltage : V c e o = 2 0 0 V • Small reverse transfer capacitance and excellent high frequency characteristic

EN3511

Abstract: TRANSISTOR MARKING 1d7 A1785 C4645 LA 4645 2SA1785 2SC4645 d015t
Contextual Info: Ordering number: EN 3511A TW O Tb DGlSbES 2SA1785/2SC4645 N 0.3511A I 270 2SA1785:PN P E p itax ial P la n a r Silicon T ran sisto r 2SC4645:NPN T riple Diffused P la n a r Silicon T ran sisto r SAW O i High Voltage Driver Applications F e a tu r e s • L arge cu rre n t capacity Ip = 1A

10l82

Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
Contextual Info: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V

Contextual Info: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

2SA1786

Abstract: 2SA1787 2SC4650 ITR04700 ITR04701 ITR04702
Contextual Info: Ordering number:ENN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high

1p39

Abstract: 2SC4639 H300 HI50
Contextual Info: f SAJWO i NO. 3 3 60 1120 ffl 2SA1781/2SC4639 -‘¡ m r t v ' r - w f c f t . -i'v br/xi^-ft. ««w.tfqreg ?»*>., w P*9(i. 2S A 1 7 8 1 0 W f r * ^ T ff A b s o lu te Maximum R a tin g s /T a ^ B T ^ .' — ^W JE •x ^ u n it VCBO 3?*5 EE V cco v 6 * •Ai - ^ W ±

2SC4465

Abstract: EN3511 2SA1785 2SC4645 5170TA
Contextual Info: Ordering number:EN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).

ITR04700

Abstract: ITR04701 ITR04702 2SA1786 2SA1787 2SC4650
Contextual Info: Ordering number:ENN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high

2SA1786

Abstract: 2SC4646 ITR04683 ITR04684 ITR04685 ITR04686
Contextual Info: 注文コード No. N 3 5 1 2 B 2SA1786/2SC4646 No. N 3 5 1 2 B 20400 半導体ニューズ No.3512A とさしかえてください。 2SA1786 : PNP エピタキシァルプレーナ形シリコントランジスタ 2SC4646 : NPN 三重拡散プレーナ形シリコントランジスタ

Contextual Info: 2SA1780 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA1789

Abstract: 2SC4653 2sa178
Contextual Info: Inchange Semiconductor Product Specification 2SA1789 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SC4653 ·Low collector saturation voltage APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION 1 Base

2sa1788

Abstract: 2sa178 2SC4652
Contextual Info: Inchange Semiconductor Product Specification 2SA1788 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SC4652 APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: Ordering number: EN3511A _ 2SA1785/2SC4645 2SA1785:PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s •Large current capacity Ic = 1A • High breakdown voltage (Vceo = 400V)

2tj transistor

Abstract: A1786 sanyo s-w 1000 MARKING 3512B pnp transistor 400V 500mA C4646 2SA1786 2SC4646 3512B en3512
Contextual Info: 7 cH 7 0 ? b DDlSbST T ib O rdering num ber: E N 3 5 1 2 B 2SA1786/2SC4646 N0.35 12B k 2SA1786:PNP Epitaxial P lanar Silicon Transistor 2SC4646:NPN Triple Diffused Planar Silicon Transistor SAXYO i High Voltage Driver Applications F e a tu re s • Large current capacity Ig = 2A

EN3581

Abstract: 2SA1786
Contextual Info: Ordering number:EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

2SA1780

Contextual Info: N ~7 /T r a n s is to r s 2SA1780 2S A 1780 l / - t l P N P y lJ 3 > h 7 > v ^ ^ Triple Diffused Planar PNP Silicon Transistor m m u ± * 4 ' y * > ? High Voltage Switching Power Supply Switching of Telephone • i'j-ffi\t"i£@ /D im e n s io n s (Unit : mm)

2SA1786

Abstract: 2SC4646 35123 2SC4646E
Contextual Info: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

2SA934

Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54