2SA1986
Abstract: 2SC5358
Text: JMnic Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage
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2SA1986
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2sc5358
Abstract: 2SA1986
Text: SavantIC Semiconductor Product Specification 2SC5358 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage
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2SC5358
2SA1986
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C5358
Abstract: No abstract text available
Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C
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2SC5358
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Untitled
Abstract: No abstract text available
Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1986
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C5358
Abstract: 2SC5358 2SA1986 2SC535
Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C
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2SC5358
2SA1986
C5358
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2SA1986
Abstract: 2SC5358 EMIC
Text: Inchange Semiconductor Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage
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2SA1986
2SC5358
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Untitled
Abstract: No abstract text available
Text: 2SC5358 東芝トランジスタ シリコンNPN三重拡散形 2SC5358 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 230 V • 2SA1986 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。
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2SC5358
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2SA1986
Abstract: 2sa198 2SC5358
Text: SavantIC Semiconductor Product Specification 2SA1986 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage
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2SA1986
2SC5358
-230V;
2SA1986
2sa198
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2SA1986
Abstract: 2SC5358
Text: Product Specification www.jmnic.com 2SC5358 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1986 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage
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2SC5358
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Untitled
Abstract: No abstract text available
Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C
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2SC5358
2SA1986
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C5358
Abstract: 2SA1986 2SC5358
Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C
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2SC5358
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Untitled
Abstract: No abstract text available
Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1986
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A1986
Abstract: 2SA1986 2SC5358
Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1986
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A1986
Abstract: 2SA1986 2SC5358
Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage
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2SA1986
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C5358
Abstract: No abstract text available
Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C
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2SA1986
Abstract: 2SC5358
Text: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3
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2SC5358
2SA1986
I--2--31
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
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2SA1986
Abstract: 2SC5358
Text: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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2SA1986
2SC5358
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2SA1986
Abstract: 2SC5358
Text: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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ta 80w
Abstract: No abstract text available
Text: TOSHIBA 2SA1986 2 SA 1 9 8 6 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • Com plem entary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier 03.2 ±0.2 Output St£lg6. 2.0±0.3
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2SA1986
2SC5358
ta 80w
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1986 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 986 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2
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2SA1986
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2SA1986
Abstract: 2SC5358 tr 2SA1986
Text: AOK Product Specification AOK Semiconductor 2SA1986 Silicon PNP Power Transistors DESCRIPTION • W ith T O -3 P l package • C om plem ent to type 2SC 5358 A P P LIC A T IO N S • Power am p lifier applications • Recom m end for SOW high fidelity audio
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2SA1986
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2SC5358
Abstract: 2SA1986
Text: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C
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2SA1986
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