2SA84 Search Results

transistor 2SA836

Abstract: 2SA836 2SA844 DSA003778 Hitachi 2SA
Contextual Info: 2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage

2SA844

Abstract: 2SA844-C 2SA844E 2SA844C 2SA844-E TRANSISTOR 2sa844
Contextual Info: 2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   High DC Current Gain Low Frequency Amplifier G H Emitter Collector Base

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA844 TRANSISTOR（ PNP ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM: -0.1 A Collector-base voltage V BR CBO : -55 V

2SA843

Abstract: 2SC1683
Contextual Info: Inchange Semiconductor Product Specification 2SC1683 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SA843 ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Audio frequency power amplifier

2SA844

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA844 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 0.3 W (Tamb=25℃) 3. BASE Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V

Contextual Info: 2SA844 Silicon PNP Epitaxial REJ03G0630-0200 Previous ADE-208-320 Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA844 TRANSISTOR PNP 1. EMITTER FEATURES z High DC Current Gain z Low Frequency Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA841BL

Abstract: 2SA841 2SA841-BL 2SA841GR 2sa841-gr 2SA841 GR TRANSISTOR 2Sa841 silicon pnp transistor
Contextual Info: v 'J = l > P N P i f c f £ * v r JU 2SA841 P C T * ;* SILICON PN P EPITAXIAL TRANSISTOR (PCT PROCESS) U n it in mm O Low Noise Audio Amplifier Applications. • f t l t f E 'C 'f " ' : V ceo = — 6 0 V : NF = 6d B (M a x .) (Rg= 10kQ , f = 10Hz) • = 200~700

2SA844

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA844 Silicon PNP Epitaxial ADE-208-320 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SA847

Abstract: 2SA847A knx-1 low noise preamplifier knx1
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse

2SA843

Abstract: 2SC1683
Contextual Info: SavantIC Semiconductor Product Specification 2SC1683 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA843 ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Audio frequency power amplifier ·Color TV vertical deflection output

2SA843

Abstract: 2SC1683
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA843 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 APPLICATIONS ·Audio frequency power amplifier applications.

2SB817

Abstract: 2sa1115 2SA992 2sa1015 2sa1302 2SA1142 sanyo 1042 2SA1123 2SA847A 2SA1782
Contextual Info: - 21 tt SJ € T y p e No. € Manuf. = SANYO m M TOSHIBA 2E m NEC 3L HITACHI S ± 3S FUJITSU ta t MATSUSHITA h m MITSUBISHI 2SA 1038 . □— A 2SA10 16 K 2SA970 2SA992 2SA1123 2SA847A 2SA 1039 □— A 2SA 10 16 2SA970 2SA992 2SA1123 2SA847A 2SA949 2SA1142

2SA843

Abstract: 2SC1683
Contextual Info: 2SC1683 2SC1683 NPN NPN Triple Diffused Mesa S ^ if'U ffl/A F Power Amplifier f}= ?— TV #it in]tH^]ffl/Color TV Vertical Deflection Output 2SA843 t. 3 > ~ f x t > $ U/ Complementary Pair with 2SA843 iS /F e a tu re s n x i y ^ ig fE v CEo iy* l ' 0/ H i g h V geo

2SA844

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA844 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 0.3 W (Tamb=25℃) 3. BASE Collector current ICM: -0.1 A Collector-base voltage

2SA844

Abstract: 2SA844CTZ 2SA844DTZ PRSS0003DA-A SC-43A
Contextual Info: 2SA844 Silicon PNP Epitaxial REJ03G0630-0200 Previous ADE-208-320 Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Contextual Info: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU

LTTH

Contextual Info: HITACHI 2SA844 SILICON PN P EPITAXIAL LOW FREQUENCY AMPLIFIER I 1 ! !" v.? ! 1. lim m e r 2. C o lk t i o f 3. iU s* tDm'wn&soro iss mmi JE D E C TO-92 I ABSOLUTE MAXIMUM RATINGS 2S A Ü 4 4 Sym bol Ite m MAXIMUM COLLECTOR DISSIPATION CURVE (T a = 2 5 ‘ C )

2sa844

Contextual Info: 2SA844 Silicon PNP Epitaxial HITACHI Application Low frequency amplifier Outline TO-92 1 i 3 2 1 1. Emitter 2. Collector 3. Base u 1 101 2SA844 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V cBO -5 5 V Collector to emitter voltage

2SA844

Contextual Info: 2SA844 2SA844 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 0.3 W (Tamb=25℃) 3. BASE Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

2SA844

Abstract: Hitachi DSA002754
Contextual Info: 2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline 2SA844 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –5

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA843 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage :V(BR)CEO=-150V(Min) • DC Current Gain : hFE= 60-200@ lc= -0.4A

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39