2SD1485 Search Results

Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1054

Abstract: 2SD1485
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

2SB1054

Abstract: 2SD1485
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1054

Abstract: 2SD1485
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2

Contextual Info: 2SD1485 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2 @I(C) (A) (Test Condition)3

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

8A60

Abstract: 2SB1054 2SD1485
Contextual Info: Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 3.2 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1054

Abstract: 2SD1485
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1054 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1485 APPLICATIONS ·Designed for high power amplification.

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1054

Abstract: 2SD1485 2sB105 EMIC 2sd148
Contextual Info: Inchange Semiconductor Product Specification 2SB1054 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

2SD1485

Abstract: 2SB1054 10VX1A
Contextual Info: P o w er T ra n s is to rs 2SD1485 2S D 1485 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir w ith 2 S B 1 0 5 4 U n it ! mm 5.2m ax. ’ z-3.2 15^5 m a x . o • F e a tu re s

2SB1054

Abstract: 2SD1485
Contextual Info: JMnic Product Specification 2SB1054 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1485 ・High transition frequency ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 1 Parameter

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

Contextual Info: Power Transistors 2SD1485 2SD1485 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1054 ■ Features • V ery good linearity of DC current gain hFE • Wide area of safety operation (ASO) • High transition frequency (ft)

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and