2SB106 Search Results

2SD1505

Abstract: 2SB1064
Contextual Info: Inchange Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SD1505

Abstract: 2SB1064
Contextual Info: SavantIC Semiconductor Product Specification 2SD1505 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SD1506

Abstract: 2SB1065
Contextual Info: SavantIC Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING

2SB1064

Abstract: 2SD1505
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1505 APPLICATIONS ·Designed for low frequency power amplifier applications.

Contextual Info: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m p lifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U nit I mm 4 .4 m a x . 1 0 .2m ax. 5 .7 m a x . ■ Features 2.9max • V e r y g o o d lin e a rity o f D C c u r r e n t gain h HE

TRANSISTOR BJ 033

Abstract: 2SB1068 JAN 5751 m5ss
Contextual Info: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB1068 TRANSISTOR PNP 1. EMITTER FEATURES z Low Collector Saturation Voltage z High DC Current Gain z High Collector Power Dissipation z Complementary To The 2SD1513 NPN Transistor

2SB1062

Contextual Info: 2SB 1062 2SB1062 v ij □ > P N P x l r ì / 7 Jl'’7 °\s —i ~ M / S i PN P Epitaxial Plannar Output Amplifier # i s ä / Features ^ Ì VcE sat ÄMä^o/LOW V CE(sat > M lA « ,y y -i? tV P I lC É Ì K tlS o M type package suitable fos automatic insertion, easier manual

2SB1067

Contextual Info: 2SB1067 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2 S B 1 067 MICRO MOTER DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : hpE = 2000 (Min.) (V'ce = - 2V, 1q = - 1A)

2SB1068

Abstract: 2SD1513
Contextual Info: NEC PNP SILICON TRANSISTOR 2SB1068 The 2SB1068 is designed fo r use in driver and o u tp u t stages of DESCRIPTION audio frequency amplifiers. • Low Collector Saturation Voltage FEATURES V c E s a t = " 0 .2 5 V TYP. (Ic = - 1 .0 A , l B = - 1 0 mA) • High DC Current Gain

Contextual Info: HITACHI 2SB1061-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um R atings Ta = 25°C Item Symbol Rating Unit Collector to base voltage Vcso -300 V Collector to emitter voltage Vceo -300 V Emitter to base voltage

SC46D

Abstract: 2SB1064
Contextual Info: h7 > 5 / T ransistors 2SB1064 2SB1064 PNP '> > ;= !> h 7 > y X $ Epitaxial Planar PNP Silicon Transistor fé J ii& ^ ^ J iâ ÎïW L o w Freq. Power Amp. • Dimensions Unit: mm 1) VcE(sat) ¿»'"fé'-'o 4. 5 ± 0.? r V c E (s a t)= -0 .5 V (T y p .) ¿3.6±0.2

2SB1064

Contextual Info: h / T ransistors 2SB1064 2SB1064 7 ° \ s - - f M P N P '> • ;= l > h 1 £ J i } j £ il^ ^ ^ f f l/ L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • i ^ J f i ^ j i l 2 / Dimensions U n it: mm 1) VC e ( sa t)= 0 .5 V (T y p .) t f t l ' o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Symbol Rating Unit

jd 1803

Abstract: 2SD150
Contextual Info: MOE D ROHM CO LTD • 7020^ 0005530 ö B9RHH /Transistors 2SB1065 T -z z -n I t P N P y<j3> 15;ü;JÎ!ii^iBlÜ Æ/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ^ f f ^ jiS / D im e n s io n s Unit : mm 1) V c e ( sat) = —0 .5 V (Typ.) ¿ i f t t ' o

2SB1069

Abstract: 2SB1069A
Contextual Info: JMnic Product Specification 2SB1069 2SB1069A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: 2SB1061 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B i •■ M[ |[ W1 1 2 1. Base 2. C ollector Flange 3. Emitter 55 kQ (Typ) Absolute Maximum Ratings (Ta 25°C) = Item Symbol Ratings Unit Collector to base voltage

2SB1243

Abstract: 2SB1066M 2SB1066
Contextual Info: h 7 > v X $ /Transistors 2SB1066M 2SB1243 2SB1066M/2 SB1243 - / i s — r m pnp '> « ;= ]> h 7 > v x ^ l£ f f i ^ i i lP ïffl/Medium Power Amp. Epitaxial Planar PNP Silicon Transistors tjv • ÿf-JFi^fifcH l/'D im snsions U nit : mm • *sä 1) V c E (s a t)= — 0.5V (Typ .)

2SB1065

Abstract: 2SD1506
Contextual Info: h 7 > y X $ /Transistors 2SB1065 T y Z tty y J V fls —M PNP v ' j 3 > k 7 > y Z $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • W g ^ iilH /D in ie n s io n s Unit : mm • M t 1) V ce ( s a t ) = —0 .5 V (Typ.) t & ' o at Ic / I b = - 2 A / —0.2A

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

2SB1064

Abstract: 2SD1505
Contextual Info: 2SB1064 h 7 > y ^ 5 / T ransistors 2SB1064 fill /Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor i ->£m /D im ension s U n it: mm) 1) VCE(s a t) = 0 .5 V (T y p.) t-fft t 'o a t Ic / I b = - 2 A / - 0 . 2 A 2) A S C W 'J k l'o 3) 2 S D 1 5 0 5 t = l > 7 PU

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1069

Abstract: 2SB1069A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1069 2SB1069A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

2SB1064

Abstract: 2SD1505
Contextual Info: SavantIC Semiconductor Product Specification 2SB1064 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1505 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications