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    2SB1132 Price and Stock

    EVVO Semiconductor 2SB1132

    TRANS PNP 32V 1A SOT89
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    ROHM Semiconductor 2SB1132T100P

    TRANS PNP 32V 1A MPT3
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    ROHM Semiconductor 2SB1132T100R

    TRANS PNP 32V 1A MPT3
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    Verical 2SB1132T100R 823 283
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    Micro Commercial Components 2SB1132-Q-TP

    TRANS PNP 32V 1A SOT89
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    ROHM Semiconductor 2SB1132T100Q

    TRANS PNP 32V 1A MPT3
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    2SB1132T100Q 800
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    2SB1132 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1132 Kexin Medium Power Transistor Original PDF
    2SB1132 ROHM Medium Power Transistor (-32V, -1A) Original PDF
    2SB1132 ROHM Medium Power Transistor (-32V,-1A) Original PDF
    2SB1132 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1132 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
    2SB1132 Unisonic Technologies MEDIUM POWER TRANSISTOR Original PDF
    2SB1132 Weitron PNP Plastic-Encapsulate Transistors Original PDF
    2SB1132 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1132 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1132 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1132 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1132 ROHM Transistor Selection Guide Scan PDF
    2SB1132 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SB1132-P-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1132Q ROHM Medium Power Transistor (-32V, -1A) Original PDF
    2SB1132-Q-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1132R ROHM Medium Power Transistor (-32V, -1A) Original PDF
    2SB1132-R-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1132SMD Various Russian Datasheets Transistor Original PDF
    2SB1132T100P ROHM TRANS DVR PNP 32V 1A SOT-89 TR Original PDF

    2SB1132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking br

    Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
    Text: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5


    Original     		PDF 2SD1664 2SB1132 40x40x0 500mA -50mA 100MHz smd transistor marking br smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current


    Original     		PDF 2SB1132 2SD1664 100ms 40x40x0 -50uA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA -50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R OT-89 O-252

    transistor

    Abstract: POWER AND MEDIUM POWER TRANSISTOR SILICON PNP POWER TRANSISTOR 2SB1132 transistor 4400
    Text: 2SB1132 PNP Silicon Medium Power Transistor Elektronische Bauelemente SOT-89 D Dimensions In Millimeters D1 1.BASE Symbol A  2.COLLECTOR  E  E1 3.EMITTER b1 b Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350


    Original     		PDF 2SB1132 OT-89 500TYP 060TYP 01-Jun-2002 transistor POWER AND MEDIUM POWER TRANSISTOR SILICON PNP POWER TRANSISTOR 2SB1132 transistor 4400

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •


    Original     		PDF 2SB1132-P 2SB1132-Q 2SB1132-R

    marking code VV transistors

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process


    Original     		PDF OT-89 OD-123+ 060TYP M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH FM140-MH marking code VV transistors

    2SB1237

    Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
    Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +


    Original     		PDF 2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 SC-62 R0039A 2SB1237 2SD1664 2SD1858 SC-72 T100 2SB1132-QR

    transistor Ic 1A datasheet NPN

    Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) transistor Ic 1A datasheet NPN 2SD1858 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		PDF 2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025

    2SB1132G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA/-50mA) 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R 2SB1132L-x-TN3-T 2SB1132G-x-TN3-T OT-89 2SB1132G

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1132 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃


    Original     		PDF 2SB1132 OT-89

    2SB1132

    Abstract: bAr sot-89 marking BAR sot89 marking BAR sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SB1132 OT-89 -100mA -500mA, -50mA -50mA, 30MHz 2SB1132 bAr sot-89 marking BAR sot89 marking BAR sot-89

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION  The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION


    Original     		PDF 2SB1132 2SB1132 -500mA -50mA) 2SB1132G-x-AB3-R OT-89 2SB1132G-x-AL3-R OT-323 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R

    2SB1132

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L


    Original     		PDF 2SB1132 OT-89 2SB1132 -500mA/-50mA) O-252 2SB1132L 2SB1132-x-AB3-R 2SB1132L-x-AB3-R 2SB1132-x-TN3-R 2SB1132L-x-TN3-R

    2SB1132

    Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
    Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1132 2SA1515S 2SB1237 500mA 2SD1664 2SD1858. 96-120-B12) 2SB1237 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SB1132 transistor

    2SD1664

    Abstract: 2SB1132
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		PDF 2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor -32V, -1A MP6Z1 Dimensions (Unit : mm) Applications Low frequency amplifier MPT6 Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. (6) (5) (4)


    Original     		PDF -500mA -50mA) 2SD1664-die 2SB1132-die R1010A

    2sb1132

    Abstract: 2SB1132-Q
    Text: MCC TM Micro Commercial Components Features 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0


    Original     		PDF 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER


    Original     		PDF OT-89-3L 2SD1664 OT-89-3L 500mA/50mA) 2SB1132 100mA 100MHz

    rohm 2sd1664

    Abstract: No abstract text available
    Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +


    Original     		PDF 2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 R1102A rohm 2sd1664

    Untitled

    Abstract: No abstract text available
    Text: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)


    OCR Scan     		PDF 2SB1132 SC-62) 2SB1132; 2SD1664 D0147DD 147D2

    Untitled

    Abstract: No abstract text available
    Text: 2SB1132 h ~7 > V 7. $ / J ransistors 2 S B 1 1 3 2 xtf^=i'r'>7^y^-^PNP h7>V^^ Epitaxial Planar PNP Silicon Transistor ^ f t ^ i i f i ^ / M e d i u m Power Amp. • • ^Jf^T -;iig/Dim ensions (Unit : mm W * 1) P c = 2 W ? * . S (4 0 X 4 0 X 0 .7 m m -fe 7


    OCR Scan     		PDF 2SB1132

    2SB1516

    Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
    Text: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -


    OCR Scan     		PDF 2SB1132 2SA1900 2S61184 2SB1188 2SB1182 2SB1189 2SB1260 2S81181 2SB1275 2SB1516 2SA1807 2SA1812 2sc4939 2SD2170

    d1664

    Abstract: Transistor 1501 2sb1237
    Text: Transistors Medium Power Transistor -32V, -1A 2SB1132/2SA1515S/2SB1237 •F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) LOW VcE(satl. VcE(sat) = - 0 .2 V (Typ.) 2SA1515S 2SB1132 4 S+0.2 (Ic /le = -5 0 0 m A /- 5 0 m A ) 5 - 0.1 16 2) C om plim ents 2S D 1664/2S D 1858.


    OCR Scan     		PDF 2SB1132/2SA1515S/2SB1237 2SB1132 2SA1515S 1664/2S SC-72 SC-62 2SB1237 2SB1132) d1664 Transistor 1501 2sb1237