2SB1322A Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2sb1322

Contextual Info: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●

2SB1322A

Contextual Info: 2SB1322A 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

2SD1994

Abstract: 2SB1322 2SB1322A 2SD1994A
Contextual Info: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 0.7 14.5±0.5 (1.0)

2SB1322A

Abstract: 2SD1994A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

2SB1322A

Abstract: 2SD1994A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y

2SD1994A

Abstract: 2SB1322A 2SD1994
Contextual Info: Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1322A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat .

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2SB1322A

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range

2SB1322A

Abstract: 2SD1994A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SB1322A

Abstract: 2sb1322ar 2SB1322AQ 2SB1322AS
Contextual Info: 2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  G Allow Supply with The Radial Taping H Emitter Collector Base J CLASSIFICATION OF hFE 1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB1322A TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Allowing Supply with The Radial Taping 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO:

2SB1335A

Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Contextual Info: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346

2SD1994A

Abstract: 2SB1322A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR NPN 1. EMITTER FEATURES z Low Collector to Emitter Saturation Voltage z Complementary Pair with 2SB1322A z Allowing Supply with the Radial Taping

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range