2SD1994 Search Results

LLO14

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2sb1322

Contextual Info: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●

Contextual Info: 2SD1994A NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.55±0.2 4.5±0.2 Features * Allowing Supply With The Radial Taping 14.3 ±0.2 * Low collector-Emitter Saturation Voltage VCE SAT

2SD1994

Abstract: 2SB1322 2SB1322A 2SD1994A
Contextual Info: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 0.7 14.5±0.5 (1.0)

2SB1322A

Abstract: 2SD1994A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

2SB1322A

Abstract: 2SD1994A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 • Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 ■ Features

2SD1994A

Abstract: 2SB1322A 2SD1994
Contextual Info: Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1322A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat .

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping

2SB1322A

Abstract: 2SD1994A
Contextual Info: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 • Features 0.65 max. Allowing supply with the radial taping. 14.5±0.5 1.0 ● (0.5) (1.0) (0.2) 4.5±0.1 0.7 2.5±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SD2037

Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
Contextual Info: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028

2SD1994A

Abstract: 2SB1322A
Contextual Info: Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 • Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 ■ Features

2SD1994A

Abstract: 2SB1322A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR NPN 1. EMITTER FEATURES z Low Collector to Emitter Saturation Voltage z Complementary Pair with 2SB1322A z Allowing Supply with the Radial Taping

2SD1994A

Contextual Info: 2SD1994A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z TO-92 Low collector-emitter saturation voltage VCE sat Allowing supply with the radial taping G H 1Emitter

2SD1994

Abstract: 2SB1322
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package  Allowing supply with the radial taping  Code MT-2-A1

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the