2SB1375 TRANSISTOR Search Results

2SB1375 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

2SB1375 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b1375 transistor Abstract: B1375 b1375, transistor transistor B1375 2SB1375 Contextual Info: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 2-10R1A b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375	PDF
b1375 transistor Abstract: b1375 Contextual Info: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 b1375 transistor b1375	PDF
b1375 transistor Abstract: b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012 Contextual Info: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 b1375 transistor b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012	PDF
b1375 transistor Abstract: B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012 Contextual Info: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin	Original	2SB1375 2SD2012 b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012	PDF
2SB1375 Abstract: 2SD2012 Contextual Info: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF
2SB1375 Abstract: 2SD2012 Contextual Info: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012	PDF
2SB1375 Abstract: 2SD2012 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A)	Original	2SB1375 2SD2012 -50mA 2SB1375 2SD2012	PDF
2SB1375 Abstract: 2sb1375 equivalent 2SD2012 Contextual Info: SavantIC Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )	Original	2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2sb1375 equivalent 2SD2012	PDF
2sb1375 transistor Abstract: 2SB1375 Contextual Info: TO SHIBA 2SB1375 Transistor Unit in mm Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Features • Low Saturation Voltage - VCE sat = -1 .5V(Max.) de = -2A, lB = -0.2A) • High Power Dissipation - Pc = 25W (Te = 25~C) • Collector Metal (Fin) is covered with m old resin	OCR Scan	2SB1375 1ui-10 2sb1375 transistor 2SB1375	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin	Original	O-220 2SB1375 O-220 2SD2012 -50mA	PDF
2SB1375 Abstract: 2sb1375 transistor Contextual Info: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012	Original	2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor	PDF
2SB1375 Abstract: 2SD2012 transistor 2sd2012 Contextual Info: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2A ) High Power Dissipation : P£ = 25W (Te = 25°C)	OCR Scan	2SB1375 2SD2012 2SB1375 transistor 2sd2012	PDF
2SD2012 Abstract: 2SB1375 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin	Original	O-220 2SB1375 O-220 2SD2012 -50mA 2SD2012 2SB1375	PDF
2SB1375 Abstract: 2SD2012 Contextual Info: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2 A ) High Power Dissipation : P£ = 25W (Te = 25°C)	OCR Scan	2SB1375 2SD2012 2SB1375	PDF

Contextual Info: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V^ e sat = —1-5V (Max.) (IC= -2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)	OCR Scan	2SB1375 2SD2012	PDF
2SB1375 Abstract: 2SD2012 2sd2012 transistor Contextual Info: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : sat “ —1-5V (Max.) (IC= —2A, IB = —0.2A) • High Power Dissipation : P0 = 25W (Te = 25°C) • Collector Metal (Fin) is Coverd with Mold Regin	OCR Scan	2SB1375 2SD2012 2SB1375 2SD2012 2sd2012 transistor	PDF
S2520 Contextual Info: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 5 ^ R 1 3 7 5 mm h it • mm m mm Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 + 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC - —2A, IB ——0.2A) High Power Dissipation \ P^ —2-5W (Tc —25°C)	OCR Scan	2SB1375 2SD2012 S2520	PDF
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220	PDF
2sd2012 Contextual Info: i TOSHIBA TRANSISTOR ZSDZ01Z SILICON PNP TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER • High DC Current Gain : 100 MIN. • Low Saturation Voltage : VCE(sat)=1•OV(Max.)(IC=2A, Ib =0.2A) • High Power Dissipation : PC=25W (Tc=25°C) • Collector Metal (Fin) is Covered with Mold Resin	OCR Scan	ZSDZ01Z O-220 2SB1375 2SD2012 Tc-25-C 2sd2012	PDF
2sc4793 Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201 Contextual Info: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)	Original	2SA1020 2SA1680 2SA1145 2SC2655 2SC2482 2SC4408 2SC2705 O-220 2SA1837 2sc4793 npn general purpose transistors application 2sd201	PDF
2sk1529 Abstract: 2sk405 2sj115 2sc3281 YTFP450 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 YTFP150 Contextual Info: MOS FET TRANSISTORS POWER MOS FETS -rr MOS II YTFP MAXIMUM RATINGS Application Type No. (N-Channel) (A) YTFP150 DC-DC Converter YTFP151 Motor Drive YTFP152 YTFP153 YTFP252 YTFP253 Motor Drive	OCR Scan	YTFP150 YTFP151 YTFP152 YTFP153 YTFP250 YTFP251 YTFP252 YTFP253 YTFP450 YTFP451 2sk1529 2sk405 2sj115 2sc3281 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405	PDF
Contextual Info: i TOSHIBA 9 Q R 1 Q7 R SILICON PNP TRIPLE DIFFUSED TYPE ZSBl375 AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : VCE sat =-1.5V(Max.) (IC=-2A, Ib =-0.2A) • High Power Dissipation : Pc=25W (Tc=25°C)	OCR Scan	ZSBl375 O-220 2SD2012 2SB1375	PDF
2sd2012 transistor Abstract: 2sd2012 2SB1375 Contextual Info: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation	Original	2SD2012 2SB1375 2sd2012 transistor 2sd2012 2SB1375	PDF
2sd2012 transistor Contextual Info: TOSHIBA 2SD2012 Transistor Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier F e a tu re s • High DC Current Gain : 100 Min. • Low Saturation Voltage ~ ^CE (Satj = 1.0V (Max.) (Ic = 2A, lB = 0.2A) • High Power Dissipation - Pc = 25W (Tc = 25~C )	OCR Scan	2SD2012 2SB1375 Tc--25 2sd2012 transistor	PDF

2SB1375 TRANSISTOR Search Results

2SB1375 TRANSISTOR Result Highlights (5)

2SB1375 TRANSISTOR Datasheets Context Search

b1375 transistor

b1375 transistor

b1375 transistor

b1375 transistor

2SB1375

2SB1375

2SB1375

2SB1375

2sb1375 transistor

2SB1375

2SB1375

2SD2012

2SB1375

2SB1375

S2520

transistor

2sd2012

2sc4793

2sk1529

2sd2012 transistor

2sd2012 transistor