2SB146 Search Results

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

2SB1463J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification

2SB1468

Contextual Info: Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219] · Micaless package facilitating mounting.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE

Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

Contextual Info: Power Transistors 2SD2221 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1469 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000

Contextual Info: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 3 0.75±0.15 5˚ • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01

2SB1467

Contextual Info: Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SB1462G

Abstract: 2SD2216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD2216G • Features ue pl d in an c se ed lud pl vi an m m es

2SB1462

Abstract: 2SD2216 SC-75
Contextual Info: Transistor 2SB1462 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to 2SD2216 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 0.30±0.03 Parameter Symbol Rating Unit Collector-base voltage Emitter open

SD2219

Abstract: 2SB14 2SB1468 2SD2219
Contextual Info: Ordering number: EN3364 2SB1468/2SD2219 Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications A pplications • Relay drivers, high-speed inverters, converters,etc. F eatures • Micaless package facilitating mounting • Low collector-to-emitter saturation voltage : VcE sat ——0.5V(PNP), 0.4V(NPN) max.

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

NEC RELAY

Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Contextual Info: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02

2SB1463J

Abstract: 2SD2240J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J

Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open

2sc2440

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO

2SB1462J

Abstract: 2SD2216J
Contextual Info: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 VCBO –60 V VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current

Contextual Info: Ordering number:ENN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219]