2SB1561 Search Results

2SB1561

Abstract: 2SD2391 T100
Contextual Info: 2SB1561 Transistors Medium Power Transistor −60V, −2A 2SB1561 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).

100M200M

Abstract: 2SB1561 2SD2391 T100
Contextual Info: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).

Contextual Info: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)

Contextual Info: Product specification 2SB1561-Q SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE SAT =-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1 ● Low saturation Voltage typically

Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

Contextual Info: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).

2SB1561

Abstract: 2SD2391 T100 60V2A
Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

Contextual Info: 2SD2391 Datasheet NPN 2.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2.0A MPT3 Base Collector Emitter 2SD2391 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1561 3) Low VCE(sat) VCE(sat)=0.35V(Max.)

transistor b228

Abstract: 2SB1561 2SD2391
Contextual Info: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SB1561

Abstract: 2SD2391 T100 T101 SAA 7020
Contextual Info: h7 O 2SB1561 /Transistors C D 4 5 6 1 y 'j3 > h 7 > y X ^ Epitaxial Planar PNP Silicon Transistor ^ ^ ^ ^ ifi^ /M id iu m Power Amp. 1W f i'+ ï É E l/ 'D im e n s io n s U n it : m m • & £ 1) V C E O = - 6 0 V T ' * 5 o 2) H U ? i f } g ^ P c = 2 W T * S 0

SMD MARKING A16

Contextual Info: Transistors IC SMD Type PNP Transistors 2SB1561-Q SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE SAT =-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1

B-228

Abstract: 94S-380-D228 transistor b228 2SB1561 2SD2391
Contextual Info: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294

2sb1561

Contextual Info: SPICE PARAMETER 2SB1561 by ROHM TR Div. * 2SB1561 PNP BJT model * Date: 2006/11/17 .MODEL 2SB1561 PNP + IS=300.00E-15 + BF=123.73 + VAF=10.700 + IKF=4.2781 + ISE=300.00E-15 + NE=1.3969 + BR=214.02 + VAR=100 + IKR=.15167 + ISC=1.2849E-9 + NC=1.8301 + NK=.83786

Contextual Info: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).

Contextual Info: 2SB1561 2SD2391 Transistors Medium Power Transistor —60V, —2A I 2SB1561 •F e a tu re s 1) Low VcetMt). (Typ.—0.15V at Ic/I b = — 1V/—50mA) 2) Collector-emltter voltage = —60 V 3) Pc * 2 W (on 40 x 40 x 0.7 mm ceramic board). 4) Complements the 2SD2391.

t3d2

Contextual Info: by> v7>$/ Transistors 2SB1561 O C R 4 5 6 4 y ' j 3 > h 7 > v 7 i Epitaxial Planar PNP Silicon Transistor ^ ^ ^ ^ ifiJ l/M id iu m Power Amp. • • jim /Dim ensions (U nit: mm 1) V c E O = - 6 0 V T ' i > ' 5 o 2) H U - ? £ } l£ P c = 2 W T '£ > 3 o

280lu

Abstract: transistor b228 SAJ 280
Contextual Info: 2SB1561 2SD2391 Transistors I Medium Power Transistor — 60V, — 2A 2SB1561 • F e a tu re s 1) L ow VcE(saj). (Typ.— 0 .1 5 V at I c /Ib 351— 1V/— 5 0m A ) 2 ) Collector-emitter voltage * — 6 0 V 3) P c = 2 W {on 4 0 X 4 0 X 0.7 m m ceram ic board).

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.