Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB834 Search Results

    SF Impression Pixel

    2SB834 Price and Stock

    K 2SB834

    Bipolar Junction Transistor, PNP Type, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB834 128
    • 1 $11.97
    • 10 $7.98
    • 100 $7.3815
    • 1000 $7.3815
    • 10000 $7.3815
    		Buy Now

    Toshiba America Electronic Components 2SB834-O

    Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SB834-O 51
    • 1 -
    • 10 -
    • 100 $5.23
    • 1000 $5.23
    • 10000 $5.23
    		Buy Now

    2SB834 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB834 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB834 Various Russian Datasheets Transistor Original PDF
    2SB834 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SB834 Mospec POWER TRANSISTORS(3.0A,60V,30W) Scan PDF
    2SB834 Mospec PNP Silicon Power Transistor Scan PDF
    2SB834 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB834 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB834 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB834 Unknown Cross Reference Datasheet Scan PDF
    2SB834 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB834 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB834 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB834 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB834 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB834 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB834 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB834 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB834 Unknown Scan PDF
    2SB834 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB834 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB834 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA 2sd880 equivalent 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR

    2SB834

    Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A


    Original     		PDF O-220 2SB834 O--220 2SD880 -500mA -500mA, 2SB834 2sb834 transistor 2SD880 2sD880 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA

    2SB834

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-220 2SB834 O-220 -50mA, -500mA 2SB834

    2SB834

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T


    Original     		PDF 2SB834 2SB834L 2SB834G 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-T60-K 2SB834

    2SB834L

    Abstract: utc 2sb834L 2SB834 2SB83 2sb834 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G „ ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T


    Original     		PDF 2SB834 2SB834L 2SB834G 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-T60-K 2SB834L utc 2sb834L 2SB834 2SB83 2sb834 transistor

    UTC2SB834

    Abstract: No abstract text available
    Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		PDF 2SB834 O-126 QW-R204-018 UTC2SB834

    2SB834

    Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
    Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1


    Original     		PDF 2SB834 O-220 2SD880 2SB834 2sb834 equivalent 2sd880 equivalent 2SD880

    2SB834

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60


    Original     		PDF O-220 2SB834 O-220 -50mA, -500mA 2SB834

    mx 2sb834

    Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
    Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO


    Original     		PDF O-220 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 mx 2sb834 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073

    2sD880 TO-220

    Abstract: No abstract text available
    Text: 2SD880 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features — — Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO


    Original     		PDF 2SD880 O-220 O-220 2SB834 500mA 300mA 2sD880 TO-220

    2SB834

    Abstract: No abstract text available
    Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		PDF 2SB834 O-220 QW-R203-014 2SB834

    2S8834 NEC

    Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
    Text: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A


    Original     		PDF

    2sb834 transistor

    Abstract: 2SB834
    Text: 2SB834 2SB834 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SB834 O-220 -50mA, -500mA 2sb834 transistor 2SB834

    2sd880 equivalent

    Abstract: 2SB834 2SD880 2sD880 TRANSISTOR
    Text: PNP 2SB834 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD880 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation(Tc=25°C)


    Original     		PDF 2SB834 O-220 2SD880 2sd880 equivalent 2SB834 2SD880 2sD880 TRANSISTOR

    2SB834

    Abstract: 2SD880
    Text: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		PDF 2SB834 O-220 2SD880 2SB834 2SD880

    UTC2SB834

    Abstract: No abstract text available
    Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		PDF 2SB834 O-220 QW-R203-014 UTC2SB834

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 FEATURES z Low Collector -Emitter Saturation Voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A z Complementary to NPN 2SD880


    Original     		PDF O-220 2SB834 2SD880 -500mA -500mA,

    2s0880

    Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
    Text: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834


    OCR Scan     		PDF 2SB834 2SD880 2SD880 2s0880 2SB83 250880 2SB834 e50V 2sD880 TRANSISTOR

    2SB834

    Abstract: 2SD880 2SB83
    Text: V li zi > pnp: m m 2SB834 í 2SB834 ê â ÎD ' S )± f t t e V ' O : V c E ( s a t ) = - l - 0 V ( S * ) ( I c = - 3 A , IB = -0 .3 A ) 3 l' i' m ìlite f t ± ê v>0 2SD 880 t =i > 7” U : P C = 30W (Tc = 25°C) > ? >) iz 4- >3 è t o (Ta = 25°C) JR


    OCR Scan     		PDF 2SB834 2SB834) 2SD880 O-220AB SC-46 2-10A1A -50mA, 2SB834 2SB83

    Untitled

    Abstract: No abstract text available
    Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae


    OCR Scan     		PDF 2SB834 2SD880 -50mA -500mA -300mA -10VIe

    2SB834

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SB834 2SD880. -50mA, 20/taec 100v200 2SB834

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ♦Conplei I P lary to 2SB834 ABSOLUTE M AXIM UM RATINGS a t Tam h=25V C haracteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SD880 2SB834 500mA 300mA

    2SB834 TOSHIBA

    Abstract: No abstract text available
    Text: -2SB834 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS A U D IO FR EQ U EN C Y PO W ER A M PLIFIER APPLIC ATIO N S. Unit in mm 0 3 .6 ÍQ .Z • Low Collector Saturation Voltage : v CE(sat)= —1-OV(Max.)at I c = -3 A , ¡3 = -0.3A Collector Power Dissipation


    OCR Scan     		PDF -2SB834 2SD880. 300x300x2m 200X200X 2SB834 TOSHIBA