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    Toshiba America Electronic Components 2SB907

    SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
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    Toshiba America Electronic Components 2SB907 (TE16L)

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    2SB907 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB907 Toshiba Silicon PNP-darlington-tranistor+diode Original PDF
    2SB907 Toshiba PNP transistor Original PDF
    2SB907 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB907 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB907 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB907 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB907 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB907 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB907 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB907 Unknown Cross Reference Datasheet Scan PDF
    2SB907 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB907 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB907 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB907 Toshiba TRANS DARLINGTON PNP 40V 3A 3(2-7B1A)|3(2-7B2A) Scan PDF
    2SB907 Toshiba Silicon PNP transistor for switching applications, hammer drive and pulse motor drive applications, power amplifier applications Scan PDF
    2SB907 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SB907A Toshiba TRANS DARLINGTON PNP 40V 3A 3(2-7B1A) Scan PDF
    2SB907B Toshiba TRANS DARLINGTON PNP 40V 3A 3(2-7B2A) Scan PDF

    2SB907 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB907

    Abstract: B-907 B907 2SD1222
    Text: 2SB907 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB907 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)


    Original     		PDF 2SB907 2SD1222 20070701-JA 2SB907 B-907 B907 2SD1222

    transistor B907

    Abstract: No abstract text available
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. transistor B907

    Untitled

    Abstract: No abstract text available
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222.

    B907

    Abstract: 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. B907 2SB907 2SD1222

    transistor B907

    Abstract: B907 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·


    Original     		PDF 2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222

    2SB907

    Abstract: B907 2SD1222
    Text: 2SB907 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB907 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)


    Original     		PDF 2SB907 2SD1222 2SB907 B907 2SD1222

    Untitled

    Abstract: No abstract text available
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222.

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    transistor B907

    Abstract: B907 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222

    transistor B907

    Abstract: B907 024 marking code 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. transistor B907 B907 024 marking code 2SB907 2SD1222

    B907

    Abstract: 2SB907 2SD1222
    Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB907 2SD1222. B907 2SB907 2SD1222

    d1222

    Abstract: 2sd1222 equivalent 2sD1222 2SB907
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)


    Original     		PDF 2SD1222 2SB907. 15transportation d1222 2sd1222 equivalent 2sD1222 2SB907

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    2SB907

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage


    OCR Scan     		PDF -2SB907 2SD1222. 2SB907 2SB907

    2sd1222 equivalent

    Abstract: 2SB907 2SD1222
    Text: TO SH IBA 2SB907 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS (A) 6.8MAX., PO W E R A M PLIFIER APPLICATIONS High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)


    OCR Scan     		PDF 2SB907 2SD1222. 2sd1222 equivalent 2SB907 2SD1222

    7550 - 1

    Abstract: 2SB907 2SD1222
    Text: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hpE(i) = 2000 (Min.) (V^E = -2 V , Iq


    OCR Scan     		PDF 2SB907 2SD1222. 7550 - 1 2SB907 2SD1222

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = -2 V , IC = -1 A )


    OCR Scan     		PDF 2SB907 2SD1222.

    cfl low loss drive

    Abstract: No abstract text available
    Text: T O SH IB A 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm & 8 MAX. 0.6 MAX. 5 .2 ± D .2 ÏZ • High DC Current Gain


    OCR Scan     		PDF 2SB907 2SD1222. cfl low loss drive

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8UAX. FEATURES: . High DC Current Gain : h F E l =2000(Min.) (VCE=~2V, IC=-1A) . Low Saturation Voltage : VcE(sat)=-l-5V(Max.) (Ic=-2A)


    OCR Scan     		PDF 2SB907 2SD1222.

    2SB907

    Abstract: 2SD1222 7550 - 1 transistor 7550
    Text: TO SH IBA 2SB907 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS (A) 6.8MAX., PO W E R A M PLIFIER APPLICATIONS High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)


    OCR Scan     		PDF 2SB907 2SD1222. 2SB907 2SD1222 7550 - 1 transistor 7550