2SC198 Search Results

2SC198 Datasheets (131)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC198	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	37.54KB	1
2SC198	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	66.22KB	1
2SC198	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	106.61KB	2
2SC198	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.1KB	1
2SC198	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.5KB	1
2SC198	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	103.26KB	1
2SC198	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.77KB	1
2SC1980	Panasonic	Silicon NPN epitaxial planer type transistor	Original	PDF	41.83KB	2
2SC1980	Panasonic	Silicon NPN epitaxial planer type	Original	PDF	54.95KB	3
2SC1980	Panasonic	NPN Transistor	Original	PDF	61.1KB	3
2SC1980	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	38.44KB	1
2SC1980	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	97.96KB	2
2SC1980	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	37.52KB	1
2SC1980	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	110.42KB	2

2SC1980	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.28KB	1
2SC1980	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	130.43KB	1
2SC1980	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	77.88KB	1
2SC1980	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	158.27KB	1
2SC1980	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	35.81KB	1
2SC1980	Unknown	Cross Reference Datasheet	Scan	PDF	35.96KB	1

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Samsung Electro-Mechanics 2SC1983 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1983		296			1 $3.50 10 $3.50 100 $3.50 1000 $1.14 10000 $1.14	Buy Now
Sanken Electric Co Ltd 2SC1983 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1983		152			1 $4.50 10 $2.25 100 $1.95 1000 $1.95 10000 $1.95	Buy Now
Sanken Electric Co Ltd 2SC1984 TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1984		7			1 $6.75 10 $3.38 100 $3.38 1000 $3.38 10000 $3.38	Buy Now
NEC Electronics Group 2SC1988 RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.07A I(C), 1-ELEMENT, L BAND, SILICON, NPN, TO-72
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1988		2			1 $54.07 10 $54.07 100 $54.07 1000 $54.07 10000 $54.07	Buy Now

2SC198 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA771 Abstract: 2SA770 2SA7 2SC1985 Contextual Info: Inchange Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 2SA771 2SA7 2SC1985	PDF
2SC1986 Abstract: 2SC1985 Contextual Info: Inchange Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SC1985 2SC1986 O-220 2SA770/771 2SC1985 2SC1986	PDF
2SA771 Abstract: 2SA770 Contextual Info: JMnic Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1985/1986 ・Low collector saturation voltage APPLICATIONS ・For general and industrial purpose applications PINNING PIN DESCRIPTION	Original	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 2SA771	PDF
25X2 Abstract: 2SA770 2SA771 w506 Contextual Info: AOK AOK Semiconductor Product Specification 2SA770 2SA771 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complément to type 2SC1985/1986 • Low collector saturation voltage APPLICATIONS - /♦. i F o r g e n e ra l and in d u stria l	OCR Scan	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA771 25X2 w506	PDF
2SC1980 Abstract: TRANSISTOR 2SC1980 2SA921 Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SC1980 2SA921 2SC1980 TRANSISTOR 2SC1980 2SA921	PDF
2SC1986 Abstract: 2SC1985 Contextual Info: SavantIC Semiconductor Product Specification 2SC1985 2SC1986 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SC1985 2SC1986 O-220 2SA770/771 2SC1985 2SC1986	PDF
2SC1986 Abstract: 2SA771 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA771 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -80(V)(Min.) ·Complement to Type 2SC1986 APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA771 2SC1986 -25mA; 2SC1986 2SA771	PDF
2SC1983 Abstract: 2sc1983 transistor SC-65 Contextual Info: 2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25℃)	Original	2SC1983 SC-65 2SC1983 2sc1983 transistor SC-65	PDF
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA770 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo= -60(V)(Min.) PIN 1. BASE • Complement to Type 2SC1985	Original	2SA770 2SC1985 O-220C -25mA;	PDF
2SA0921 Abstract: 2SC1980 Contextual Info: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open)	Original	2SC1980 2SA0921 2SA0921 2SC1980	PDF
2SA921 Abstract: 2SC1980 2SA0921 2SC198 Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2	Original	2SA0921 2SA921) 2SC1980 2SA921 2SC1980 2SA0921 2SC198	PDF
2SA0921 Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980 Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)	Original	2SC1980 2SA0921 2SA921) 2SA0921 2SA921 2SC1980 TRANSISTOR 2sc1980	PDF
Contextual Info: 2SC1986 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC1986 Freq10M	PDF
Contextual Info: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 M Di ain	Original	2SC1980 2SA0921	PDF

2SA0921 Abstract: 2SA921 2SC1980 Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 • Features	Original	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980	PDF
2SA770 Abstract: 2SC1985 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA770 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -60(V)(Min.) ·Complement to Type 2SC1985 APPLICATIONS ·Designed for audio and general purpose applications.	Original	2SA770 2SC1985 -25mA; 2SA770 2SC1985	PDF
2SA921 Abstract: 2SA92 2SC1980 2SC198 Contextual Info: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	2SA921 2SC1980 2SA921 2SA92 2SC1980 2SC198	PDF
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi	Original	2SA0921 2SA921) 2SC1980	PDF
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2	Original	2SA0921 2SA921) 2SC1980	PDF
2SC1983 Contextual Info: 2SC1983 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC1983 Freq15M	PDF
Contextual Info: 2SC1988 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)	Original	2SC1988	PDF
2SC1986 Contextual Info: SANKEN ELECTRIC CO LT» 1 m 7 ^ 0 7 4 1 0DÜGSÖS 3SE D ^ S A K J "ESò-l^l Silicon PNP Epitaxial Planar ☆ Complement to types 2SC1985 thru 2SC1986 Application Exampfe : • Outline Drawing 1 •••■MT-25 TO220 • Test Circuit. . -■•	OCR Scan	2SC1985 2SC1986 MT-25 -25mA 2SA770 2SA771 60min 2SA771 80min 10typ 2SC1986	PDF
2SA0921 Abstract: 2SA921 2SC1980 Contextual Info: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage	Original	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980	PDF
2SA771 Abstract: 2SA770 Contextual Info: SavantIC Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 CollectSA771 2SA771	PDF

2SC198 Search Results

2SC198 Datasheets (131)

2SC198 Price and Stock

Samsung Electro-Mechanics 2SC1983

Sanken Electric Co Ltd 2SC1983

Sanken Electric Co Ltd 2SC1984

NEC Electronics Group 2SC1988

2SC198 Datasheets Context Search

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