2SC322 Search Results

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265

TRANSISTOR C3225

Abstract: c3225 transistor C3225 npn 2sc3225 transistor 2SC3225 DSA00428678 C3225
Contextual Info: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)

TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 C3225 npn
Contextual Info: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)

C3225 npn

Abstract: 2SC3225 C3225
Contextual Info: 2SC3225 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3225 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。

TRANSISTOR C3225

Abstract: C3225 npn 2SC3225 C3225
Contextual Info: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)

2SC3223

Contextual Info: SavantIC Semiconductor Product Specification 2SC3223 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING See Fig.2 PIN

2SC3229

Abstract: VCEO300V
Contextual Info: SavantIC Semiconductor Product Specification 2SC3229 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage: VCEO=300V min APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SC3225

Abstract: 2sc3225 transistor
Contextual Info: TO SH IBA 2SC3225 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.1 M A X. • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : V ç;e (sat) = 0.5 V (Max.) (Iç; = 300 mA)

2SC3223

Contextual Info: Inchange Semiconductor Product Specification 2SC3223 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING See Fig.2 PIN

2SC3229

Contextual Info: Inchange Semiconductor Product Specification 2SC3229 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage: VCEO=300V min APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SC3229

Abstract: transistor 2sC3229 2sc3229 transistor 2sc3229 kec TV chroma output
Contextual Info: SILICON NPN TRANSISTOR TRIPLE DIFFUSED TYPE PCT PROCESS ( 2SC3229 APPLICATION ) •Color TV Chroma Output. ( features ) ♦ High Voltage V Ce o = 3 0 0 V • Small Collector Output C apacitance ! Cob = 4.0pF (Max.) I M A X IM U M R A T I N G S (Ta = 25°C)

2SC3225

Contextual Info: TO SH IBA 2SC3225 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 Unit in mm SWITCHING APPLICTIONS 5.1 M A X. SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : V ç;e (sat) = 0.5 V (Max.) (Iç; = 300 mA)

TRANSISTOR C3225

Contextual Info: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)

TRANSISTOR C3225

Abstract: c3225 transistor C3225 npn 2SC3225 C3225 2sc3225 transistor
Contextual Info: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)

2SC3220

Contextual Info: SavantIC Semiconductor Product Specification 2SC3220 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol

2sc3225

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3225 INDUSTRIAL APPLICATIONS U nit in mm SW ITCHING APPLICTIONS. SOLENOID DRIVE APPLICATIONS. • • High DC Current Gain : hpE = 500 Min. (Iç; = 400mA) Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (Iç = 300mA) M A X IM U M RATINGS (Ta = 25°C)

MSL Rating

Abstract: 2SC3225
Contextual Info: TOSHIBA 2SC3225 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICTIONS. SOLENOID DRIVE APPLICATIONS. 5.1 M AX. • • High DC Current Gain : hpE = 500 Min. (1(2 = 400mA) Low Saturation Voltage : V(2e (sat) = 0.5V (Max.) (Iq = 300mA)

T10W20F3

Abstract: transistor 2203
Contextual Info: N P N S v'J 3 > /\° r7— 1 N P N T y p e S ilico n P o w e r T ra n s is to r 2SC3220 T10W20F3 O u t lin e D im ensions A b s o lu t e M a x . R a t in g s . Ite m frf fiit M C o n d itio Symbol^" re — 55 T s lg S to r a g e T e m p e ra tu r e R a tin g s

Contextual Info: TOSHIBA 2SC3225 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 INDUSTRIAL APPLICATIONS Unit in mm SW ITCHING APPLICTIONS. SOLENOID DRIVE APPLICATIONS. • • High DC Current Gain : l r p E = 500 Min. (Iß = 400mA) Low Saturation Voltage : V qe ( s a t ) = ^-5V (Max.) (Iq = 300mA)

2sc3225 transistor

Contextual Info: T O SH IB A 2SC3225 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 SWITCHING APPLICTIONS. INDUSTRIAL APPLICATIONS Unit in mm SOLENOID DRIVE APPLICATIONS. 5.1 M AX. • • High DC Current Gain : hjrE —500 Min. (Iç = 400mA) Low Saturation Voltage : V ç;e (sat) = 0.5V (Max.) (Iq = 300mA)

TO-247

Abstract: 2SC3220 2SC32
Contextual Info: Inchange Semiconductor Product Specification 2SC3220 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157