2SC332 Search Results

C3328 NPN Transistor

Abstract: c3328 2SC3328 transistor 2Sa1315 2sc3328
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •

2SC3883

Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

Contextual Info: Reliability Tests Report Product Name: 2SC3326 Package Name: S-MINI 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200 to 700

2SC3326

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications • Unit: mm High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2SC3328

Abstract: 3AAG 2SC332 2SA1315 2SC3328 transistor
Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage • VCE ( s a t ) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SC3327

Contextual Info: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 FOR MUTING AND SWITCHING APPLICATIONS • High Emitter-Base Voltage • High Reverse hpE : hpE = 150 Typ. (Vc e = —2V, Iç;= —4mA) • Low On Resistance : R o N “ l^(T yp.) (Iß —5mA)

Contextual Info: 2SC3322 Silicon NPN Tirple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -3P 1. Base 2. Collector Flange 3. Emitter 1 2 Absolute Maximum Ratings (Ta = w 3 25 °C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: TO SHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 0^ ^ Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • • • • + 0.5 2.5-0.3 High Emitter-Base Voltage : Vj5BO~25V (Min.) High Reverse hpg : Reverse hpE = 150 (Typ.) (V C E = -2 V , Iç;= —4mA)

2SC3883

Abstract: MRF-466 STI-801 S01428 STi-812 MRF497 s2000 npn mrf239 trw rf THB94
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

marking ACY

Abstract: transistor ACY PNP acy transistor marking ACY SOT-23
Contextual Info: 2SA1313 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — — — Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements the 2SC3325. 2.80 1.60 0.15 1.90 MARKING : ACO,ACY

2SC3324

Abstract: 2SA1312
Contextual Info: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700

2SC3326

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2SC3327

Contextual Info: TO SH IBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : Ve b O —25V Min. High Reverse hpE • hpE = 150 (Typ.)(V cE= —2V, Ic = —4mA) Low On Resistance : Rq N “ 1^ (Typ.) (Iß —5mA)

2SC3325

Abstract: 2SA1313
Contextual Info: TOSHIBA 2SC3325 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3325 A U D IO FREQUENCY LO W PO W ER AM PLIFIER APPLIC ATIO NS Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS + 0.5 SW ITCH IN G APPLICATIO NS • Excellent hjpg Linearity

2SC3329

Abstract: m 3329 2SA1316
Contextual Info: TO SH IBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3329 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS . 5.1 MAX. • Very Low Noise in the Region of Low Signal Source Impedance

2SC3326

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications • Unit: mm High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) · Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

Contextual Info: 2SC3328 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Contextual Info: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SA1315

Abstract: 2SC3328 A1315 2sa1315 y
Contextual Info: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

Transistor A1315

Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
Contextual Info: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)