2SC352 Search Results

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

2SC3526H

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

2SC3521

Contextual Info: HITACHI 2SC3521 SILICON NPN EPITAXIAL PLANAR H IG II FR EG U EN C Y AM PLIFIER SWITCH 0 « ;l i í Í I L 3 l *1 *»•< 1 A rt IA to ■ » il l <N4 - r & 1095 1. Kn1 »¡1er 2. D«« wi ! •O 1 Q n u 2 H 31 .1 5, Colleen* ÜJ mernk.M in min tP MPAK) I ABSO LU T E MAXIMUM RATINGS (Ta=2>°C)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 5.9±0.2 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob

Contextual Info: Power T ransistors 1^32052 2SC3528 G G lb 4 4 fi 0 7 ^ 2SC3528 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm • Features 5.2m ax. . 15.5m ax. 6.9min. • Low collector-em itter saturation voltage Vce (saw

2SC3521

Contextual Info: H ITACH I 2SC3521 SILICON NPN EPITAXIAL PLANAS HIGH FREQUENCY AMPLIFIER SWITCH a - JdL ,± £ z S ¿ \2\±I I LI. 4 ~ , i I 1. 1 h i * I 2. :íJ-;mcAü«>^ mmm? MPAK • ABSOLUTE MAXIMUM RATINGS (T a-25X ) ; Symbol Item MAXIMUM COLLECTOR DISSIPATION CURVE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 d p lan inc ea se

2sc3520

Abstract: 07mx
Contextual Info: SANKEN ELECTRIC CO LTP 55E ]> 7 ^ 0 7 4 1 O O G m s a 114 ISAKJ Silicon NPN Triple Diffused Planar ☆ H ig h Voltage Switching T ransistor 2SC3520 Application Example : • Outline Drawing 2 ••• -MT-100 T03P Switching Regulator and General Purpose

2SC3526H

Contextual Info: Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 5.9±0.2 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range

2SC3526

Contextual Info: Transistor 2SC3526 H Silicon NPN epitaxial planer type For display video output Unit: mm 5.9±0.2 4.9±0.2 ● High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 • Features

2SC3528

Contextual Info: SavantIC Semiconductor Product Specification 2SC3528 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High collector current ·Low saturation voltage APPLICATIONS ·For high voltatge ,high speed power switching applications PINNING see Fig.2

2SC3527

Abstract: 41EA pnp 500v
Contextual Info: Pow er Transistors b13EñS2 DDlb445 2SC3527 DtT 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it : ' n n • Features 5.2m ax. 15.5max. 6.9min. • High speed sw itching r* • High collector-base voltage

2SC3528

Contextual Info: Power Transistors 2SC3528 2SC3528 Silicon PNP Triple-Diffused Planar Type . Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mm • Features 5.2n>ax. 15.5max. 6.9min. • L o w c o lle c to r-e m itte r s a tu ra tio n v o lta g e V ce <aat>

BC232A

Abstract: PN544 2SC9410 TD-101 SA2716 LOW-POWER SILICON NPN ZTX223 NA31XH TD101 2MC509
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

2SC3528

Contextual Info: SavantIC Semiconductor Product Specification 2SC3528 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector current ·Low saturation voltage APPLICATIONS ·For high voltatge ,high speed power switching applications PINNING see Fig.2

Contextual Info: Power T ransistors 2SC3527 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features Unit I ' m 5.2max. 15,5max6.9min. • High speed switching 3.2- • High collector-base voltage Vcbo Epoxy

2SC3528

Abstract: vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3528 DESCRIPTION •Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications.

2SC3527

Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS
Contextual Info: 2SC3527 Power Transistors 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit • Features mm 5.2max. 15.5m ax • High speed switching • High collector-base voltage V cbo • Good linearity of DC current gain ( h FF.)

2SC3528

Abstract: 50-60H
Contextual Info: 2SC3528 Silicon PNP Triple-Diffused Planar Type . Package Dimensions High Breakdown Voltage, High Speed Switching IS.Smx . 3.9min. • Features • • • • Low collector-emitter saturation voltage VCb (mW Good linearity of DC current gain (hrc) High collector current (Ic)

2SC3520

Contextual Info: SANKEN ELECTRIC CO LTP 55E ]> 7 ^ 0 7 4 1 O O G m s a 114 ISAKJ Silicon NPN Triple Diffused Planar ☆ High Voltage Switching Transistor 2SC3520 Application Example : • Outline Drawing 2 ••• -M T-100 T03P Switching Regulator and General Purpose Electrical Characteristics

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

NEC 3358

Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
Contextual Info: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL