2SC452 Search Results

ITS 31422

Abstract: 2044B 2SC4523
Contextual Info: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed

2SC4520

Contextual Info: Ordering number: EN 3139 2SC4520 No.3139 i SANTO NPN E pitaxial P la n ar Silicon T ransistor i High-Speed Switching Applications F e a tu r e s . Adoption ofFB ET, MBIT processes • Large cu rre n t capacity • Low collector-to-em itter saturation voltage

2SC4523

Abstract: 8A400
Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SC4523 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max

2SC4522

Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SC4522 TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1

2SC4525

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W

2SC4520

Abstract: ITR07159 ITR07160 2SC452
Contextual Info: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm

Contextual Info: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

transistor kd 2059

Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA
Contextual Info: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR T Y P E D IS C R E T IO N 2 S C 45 2 5 is a silicon N P N epitaxial planar type transistor sp e cifica lly designed fo r R F power am plifiers applications in 1 .65 G H z. FEATURES • High power gain: G p b ^ 6.0dB , P0 = 20W

2SC4520

Contextual Info: Ordering number:EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.

2sc4525

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2 S C 4 5 2 5 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65G H z. FEATURES • • High power gain: G p b ^ 6.0dB, P0 = 2 0W

ITR07161

Abstract: ITR07162 2SC4520 ITR07159 ITR07160
Contextual Info: Ordering number:ENN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

Contextual Info: Ordering num ber: EN 3141A 2SC4522 No.314lA NPN E pitaxial P lan ar Silicon T ransisto r High-Speed Switching Applications Features . Adoption of FBET, MBIT processes • Large cu rren t capacity • Low collector-to-em itter satu ratio n voltage • F ast sw itching speed

Contextual Info: 2SC4527 SILICQN NPN EPITAXIAL P LA N A R T Y P E TR A N SIS T O R U nit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) • • Transition Frequency is High and Dependent on C urrent Excellently.

2SC4528

Abstract: 111j DARLINGTON 5A 1500V
Contextual Info: Power Transistors 2SC4528 2SC4528 P a c k a g e D im e n s io n s U n it ! mm S ilicon NPN Triple-D iffused Planar D arlington Type 5 .3 m a x . 2 0 .5 m a x . 3.0- H ig h P o w e r S w itch in g I* • F e a tu re s • H ig h s p e e d s w itc h in g • H ig h c o lle c to r - b a s e v o lta g e V cbo

SMD TRANSISTOR MARKING BR

Abstract: SMD TRANSISTOR BR 2SC4520 MARKING SMD NPN TRANSISTOR BR CK marking SMD ic Package SMD NPN TRANSISTOR BR
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4520 Features Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter

2SC4528

Abstract: DARLINGTON 5A 1500V 100X2
Contextual Info: Pow er T ransistors 2SC4528 2SC4528 Package Dim ensions U n it ! mm Silicon NPN Triple-Diffused Planar Darlington Type 5 .3 m a x . 2 0 .5 m a x . 3 .0 High Power S w itching • Features y • H igh sp e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e

pa 2030a

Abstract: 2SC4520 QGQ711G K 2038
Contextual Info: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage

3000T

Abstract: 2SC4246 2SC4527
Contextual Info: TOSHIBA 2SC4527 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4527 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS C O M M O N BASE TV TUNER, UHF CONVERTER APPLICATIONS (C O M M O N BASE) 2.1 ± 0.1 1.25 ±0.1 • Transition Frequency is High and Dependent on Current

2SC5072

Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Contextual Info: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679

2SC4521

Abstract: ITR07169 ITR07170
Contextual Info: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2044B

Abstract: 2SC4522
Contextual Info: Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions