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    Toshiba America Electronic Components 2SC4540(TE12L,F)

    Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) PW-Mini T/R
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    2SC4540 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4540 Kexin Power Switching Applications Original PDF
    2SC4540 Toshiba NPN Transistor Original PDF
    2SC4540 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4540 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4540 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4540 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4540 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC4540 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF

    2SC4540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)


    Original     		PDF 2SC4540 2SA1735 SC-62 20070701-JA 2SA1735 2SC4540

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1735 -500mA) 2SC4540 -500mA -25mA -100mA

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)


    Original     		PDF 2SC4540 2SA1735 2SA1735 2SC4540

    smd marking KC

    Abstract: smd diode marking KC 2SC4540 2SA1735 marking KC smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4540 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 500mA) High Speed Switching Time: tstg = 0.4ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1735


    Original     		PDF 2SC4540 500mA) 2SA1735 100mA 700mA 500mA smd marking KC smd diode marking KC 2SC4540 2SA1735 marking KC smd marking TF

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)


    Original     		PDF 2SC4540 2SA1735 2SA1735 2SC4540

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)


    Original     		PDF 2SC4540 2SA1735 SC-62 2SA1735 2SC4540

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) · High speed switching time: tstg = 0.4 µs (typ.)


    Original     		PDF 2SC4540 2SA1735 2SA1735 2SC4540

    2SA1735

    Abstract: marking LC 2SC4540
    Text: Transistors SMD Type Power Switching Applications 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540


    Original     		PDF 2SA1735 -500mA) 2SC4540 -10mA -100mA -700mA -500mA -25mA 2SA1735 marking LC 2SC4540

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)


    Original     		PDF 2SC4540 2SA1735 2SA1735 2SC4540

    Untitled

    Abstract: No abstract text available
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)


    Original     		PDF 2SC4540 2SA1735

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)


    Original     		PDF 2SC4540 2SA1735 2SA1735 2SC4540

    2SA1735

    Abstract: 2SC4540
    Text: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)


    Original     		PDF 2SA1735 2SC4540 2SA1735 2SC4540

    2SA1735

    Abstract: 2SC4540
    Text: 2SA1735 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1735 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −500 mA)


    Original     		PDF 2SA1735 2SC4540 SC-62 2SA1735 2SC4540

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4540 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 500mA) High Speed Switching Time : tgtg= 0.4,«s (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735

    2SA1735

    Abstract: 2SC4540 005g
    Text: TOSHIBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735 250mm2x0 2SA1735 2SC4540 005g

    2SA1735

    Abstract: 2SC4540
    Text: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735 250mm2 2SA1735 2SC4540

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4540 U nit 4.6 MAX. o POWER A MPLIFIER APPLICATIONS 1 6 MAX. 0.4 ± 0 .0 5 » POWER SWITCHING APPLICATIONS • Low S a t u r a t i o n V o l t a g e VCE s a t = 0 . 5 V ( M a x . ) ( I c =500mA) • H i g h S p e e d S w i t c h i n g T im e :


    OCR Scan     		PDF 2SC4540 500mA) A1735

    2SA1735

    Abstract: 2SC4540
    Text: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735 250mm2 2SA1735 2SC4540

    Untitled

    Abstract: No abstract text available
    Text: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package


    OCR Scan     		PDF 2SA1735 -500mA) 2SC4540 -10mA, -100mA -700mA -500mA, -25mA

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2SA1735

    Abstract: 2SC4540
    Text: TO SHIBA 2SA1735 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 735 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX — j- 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 + 0.05 : VCE (sat)= —0.5V (Max.) (Iq = —500mA)


    OCR Scan     		PDF 2SA1735 --500mA) 2SC4540 100mA 700mA --500mA, --25mA 2SA1735 2SC4540