2SC506 Search Results

2SC5065

Abstract: 150-1 MARKING toshiba 133
Contextual Info: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

ET 2314

Contextual Info: 2SC5065 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR Unit in mm V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ld B , | S 2 l e l 2 = 12dB f=lG H z ÖO + COI Ö M A X IM U M R A T IN G S (Ta = 25°C)

Contextual Info: T O SH IB A 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC506 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5063

Contextual Info: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 1:Base 2:Collector 3:Emitter N Type Package 3 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3

2SC5066FT

Abstract: MA80240
Contextual Info: 2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5060

Abstract: 2SC5060 equivalent ic 9010
Contextual Info: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 !External dimensions (Units : mm) 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”

2SC5066

Contextual Info: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 12dB f=lG H z Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)

A1712

Contextual Info: 2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2038A

Abstract: BX-0115
Contextual Info: O rdering n u m b e -: EN 4 5 0 9 i 2SC5069 No.4509 SA\YO N PN E p itax ial P lan a r Silicon T ran sisto r Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •H igh C u rre n t C apacity. • Adoption of MBIT process. ■H igh DC c u rre n t gain.

Contextual Info: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05

sc 2314

Abstract: 2SC5064
Contextual Info: TO SH IBA 2SC5064 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5064 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 - 0 .3 • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2= 12dB f=lG H z + 0.25 k 1-5 - ° - 15 >i

2SC5066

Abstract: 2SC5066FT
Contextual Info: TO SH IBA 2SC5066FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066FT VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 i e l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5066

Abstract: transistor 2SC5066
Contextual Info: TOSHIBA 2SC5066 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5066 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le |2= 12dB f=lG H z Unit in mm 0.8 ± 0.1 r MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: Reliability Tests Report Product Name: 2SC5066 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SC5068

Contextual Info: HITACHI 2SC5068A-Silicon NPN Triple Diffused Planar Application TO-3PFM N Character display horizontal deflection output Features • High breakdown voltage V CBo = 1 5 0 0 v >Ic = 12 A • High speed switching tf = 0.2 psec(typ) 1. Base 2. Collector

2SC5063

Contextual Info: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 3.4±0.3 8.5±0.2 For high breakdown voltage high-speed switching 6.0±0.5 1.0±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 V 500 V 400 V 7 V VCEO Emitter to base voltage VEBO Peak collector current

Contextual Info: 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SC5064

Contextual Info: 2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SC5064

Abstract: 2801 j25 ic1030
Contextual Info: 2SC5064 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5064 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目

2SC5066

Abstract: 2801 j25 30J250
Contextual Info: 2SC5066 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5066 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目

2801 j25

Abstract: 2SC5065
Contextual Info: 2SC5065 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5065 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項 目

2SC5060

Contextual Info: 2SC5060 /Transistors 2SC50601 7Jl'7‘L/ ~ f^N P N n'syztw-'J> ^ > # # Epitaxial Planar NPN Silicon Transistor Darlington) J i)j£ li:ftiti,l1!ffl/L o w Freq. Power Amp. • • 1) v f iiE l/D im e n s io n s (U n it : m m ) 90±10V » 7 K £ f*3SE„

2SC5069

Abstract: VEBO-15V 2038a
Contextual Info: Ordering n u m b e r:E N 4 5 0 9 No.4509 _ 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •High C urrent Capacity. • Adoption of MBIT process. • High DC current gain.

toshiba 1107

Abstract: 2SC5065
Contextual Info: TO SH IBA 2SC5065 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5065 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , |S2lel2= 12dB f=lGHz 2.1 ¿ 0.1 1.25Ì0.1 ^ -4 in 1 o in VO 2 o