2SC580 Search Results

2SC5801

Abstract: nec k 813 2SC5801-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION

2SC5436

Abstract: 2SC5800 low vce transistor
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

2SC5800

Abstract: NESG2046M33 NEC JAPAN IC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor

9904 120 13843

Abstract: 2SC5435 2SC5800 nec 4308
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

2044B

Abstract: 2SC5808 N2906 2SC580 TA-3412
Contextual Info: 注文コード No. N 7 0 7 9 2SC5808 三洋半導体データシート N 2SC5808 特長 NPN 三重拡散プレーナ形シリコントランジスタ スイッチング電源用 ・高耐圧である。 ・スイッチングスピードが速い。 ・ASO が広い。

2SC5436

Abstract: 2SC5800 uPA863TD-Q2
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor

transistor nec 8772

Abstract: nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package

Contextual Info: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor

2SC5802

Contextual Info: Inchange Semiconductor Product Specification 2SC5802 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Wide area of safe operation APPLICATIONS ・For high voltage color display horizontal deflection output applications

2SC5801

Abstract: 2SC5801-T3 1429 a
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION

2SC5804

Abstract: TRANSISTOR 2sc5804 2SC3052
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5804 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5804 is a super mini package resin sealed

MARKING 6260

Abstract: 2SC5436 2SC5800 P1573 uPA863TC-T1
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: High gain transistor suited for buffer applications

2sc5807

Abstract: circuit power convertor dc to dc
Contextual Info: 〈Transistor〉 2SC5807 DEVELOPING For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5807 is a silicon NPN epitaxial Transistor. 4.6 MAX 1.6 It designed with high collector current and high collector dissipation.

2SC5435

Abstract: 2SC5800
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features

transistor 1201 1203 1205

Abstract: 2SC5435 2SC5800 marking 5a MARKING 6260
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: High gain transistor suited for buffer applications

2SC5801

Abstract: 2SC5801-T3 2sc5801-a "3-PIN LEAD-LESS MINIMOLD" marking 654 3pin NE851M13
Contextual Info: NPN SILICON RF TRANSISTOR NE851M13 / 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION

2SC5801

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD Data Sheet NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES <R> • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801)

2SC5800

Abstract: NESG2046M33
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor

rf npn

Abstract: 2SC5801
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase d s lo rlio n , lo w v o ilage opefalion ■ Ideal lor 051 applica Ibns ■ i-pin lead-less minimold package

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor

2sc5802

Contextual Info: JMnic Product Specification 2SC5802 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Wide area of safe operation APPLICATIONS ・For high voltage color display horizontal deflection output applications PINNING