2SC589 Search Results

2SC5895

Abstract: 2SC589
Contextual Info: SavantIC Semiconductor Product Specification 2SC5895 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Power supply for audio and visual equipments such as TVs and VCRs

2SC5890

Contextual Info: JEIIZU , Line. C/ 20 STERN AVE. SPRINGFIELD, .NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor 2SC5890 UkSUKIKMUN >"4|^^ • High Gain Bandwidth Product SOT-23-3L package fT = 7.8 GHz TYP. • High power gain and low noise figure ;

ADE-208-153

Abstract: 2SC5890 SC-59A 12-CE 519
Contextual Info: 2SC5890 Silicon NPN Epitaxial UHF / VHF wide band amplifier REJ03G0763-0100 Previous ADE-208-1533 Rev.1.00 Aug.10.2005 Features • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz

2SC5895

Contextual Info: Inchange Semiconductor Product Specification 2SC5895 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・Power supply for audio and visual equipments such as TVs and VCRs

2SC5894

Abstract: L 0403 817
Contextual Info: 2SC5894 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0764-0200 Previous ADE-208-1605A Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.8 dB typ. at f = 1.8 GHz

TO220D

Abstract: 2sa2102 220d 2sc58
Contextual Info: New Combining low VCE sat and high speed. High-Speed Switching Power Transistor Series „ Product Outline 2 are high-speed switching power transistors optimized for power supply of AV and industrial equipment.

ADE-208-153

Abstract: Hitachi DSA00280
Contextual Info: 2SC5890 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1533 Z 1st. Edition Aug.2002 Features • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation:

2SC5894

Contextual Info: 2SC5894 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0764-0200 Previous ADE-208-1605A Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.8 dB typ. at f = 1.8 GHz

2SC5895

Abstract: C5895 2SC589
Contextual Info: Power Transistors 2SC5895 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features • High-speed switching tstg: storage time/tf: fall time is short

2SC5899

Abstract: VCBO1700V
Contextual Info: Ordering number : ENN7538 2SC5899 NPN Triple Diffused Planar Silicon Transistor 2SC5899 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1700V . High reliability(Adoption of HVP process).

2SC5895

Contextual Info: JMnic Product Specification 2SC5895 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・Power supply for audio and visual equipments such as TVs and VCRs ・Industrial equipments such as DC-DC

c5896

Abstract: 2SC5896
Contextual Info: Power Transistors 2SC5896 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features • High-speed switching tstg: storage time/tf: fall time is short

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC5894

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5890FS-TL

Abstract: ADE-208-153 1533 ie 5 2SC5890 SC-59A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SC5890

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2SC557

Abstract: 2SC548 kt200 2sc431 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC401 2SC402 2SC402A 2SC403 2SC403A 50 50 50 50 50 5 100 100 100 100 100 100 100 180 100 180 2SC403B 50 4 100 320 2SC403C 60 4 100 320 2SC404 2SC405 2SC406 50 25 25 3 50 15 200

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?