2SD1220 Search Results
2SD1220 Price and Stock
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2SD1220 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| 2SD1220 | Kexin | Silicon NPN Epitaxial Transistor | Original | |||
| 2SD1220 |
|
NPN Transistor | Original | |||
| 2SD1220 | TY Semiconductor | Silicon NPN Epitaxial Transistor - TO-252 | Original | |||
| 2SD1220 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | |||
| 2SD1220 | Unknown | Transistor Substitution Data Book 1993 | Scan | |||
| 2SD1220 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | |||
| 2SD1220 | Unknown | Japanese Transistor Cross References (2S) | Scan | |||
| 2SD1220 | Unknown | Cross Reference Datasheet | Scan | |||
| 2SD1220 | Unknown | Catalog Scans - Shortform Datasheet | Scan | |||
| 2SD1220 | Unknown | Catalog Scans - Shortform Datasheet | Scan | |||
| 2SD1220 |
|
Silicon NPN transistor for power amplifier applications | Scan |
2SD1220 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 |
Original |
2SD1220 O-252 D1220 | |
2sd1220
Abstract: 2SB905
|
OCR Scan |
2SD1220 2SB905 2sd1220 | |
2SB905
Abstract: 2SD1220
|
OCR Scan |
2SB905 2SD1220 2SB905 2SD1220 | |
D1220
Abstract: 2sd1220 2SB905
|
Original |
2SD1220 2SB905 D1220 2sd1220 2SB905 | |
D1220
Abstract: 2sd1220 2SB905
|
Original |
2SD1220 2SB905 D1220 2sd1220 2SB905 | |
|
Contextual Info: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage |
Original |
2SD1220 2SB905 | |
2SD1220Contextual Info: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage |
OCR Scan |
2SD1220- 2SB905 200mA 2SD1220 2SD1220 | |
D1220
Abstract: 2SB905 2SD1220
|
Original |
2SD1220 2SB905 D1220 2SB905 2SD1220 | |
2SD1220
Abstract: D1220 2SB905
|
Original |
2SD1220 2SB905 2SD1220 D1220 2SB905 | |
|
Contextual Info: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage |
OCR Scan |
2SD1220 2SB905 | |
|
Contextual Info: TO SHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage VCEO Emitter-Base Voltage |
OCR Scan |
2SB905 2SD1220 | |
2SB905
Abstract: B905 2SD1220
|
Original |
2SB905 2SD1220 20070701-JA 2SB905 B905 2SD1220 | |
2SB905
Abstract: 2SD1220
|
OCR Scan |
2SB905 2SD1220 2SB905 | |
2sd1220
Abstract: 2SB905
|
OCR Scan |
2SD1220 2SB905 2sd1220 | |
|
|
|||
2sd1220
Abstract: 2SB905
|
OCR Scan |
2SD1220 2SB905 2sd1220 | |
U2550
Abstract: 2sd122
|
OCR Scan |
2SD1220 200mA 500mA, U2550 2sd122 | |
2SB905Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage |
OCR Scan |
2SB905 2SD1220 -10mA, -200mA -500mA, -50mA 2SB905 | |
D1220
Abstract: D122 2sd1220
|
Original |
2SD1220 O-252 D1220 D1220 D122 2sd1220 | |
|
Contextual Info: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150 |
OCR Scan |
2SD1220 2SB905 200mA | |
|
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage |
OCR Scan |
-2SB905 2SD1220 2SB905 | |
|
Contextual Info: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage |
OCR Scan |
2SD1220 2SB905 | |
D1220
Abstract: 2sd1220 2SB905
|
Original |
2SD1220 2SB905 D1220 2sd1220 2SB905 | |
|
Contextual Info: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage |
OCR Scan |
2SB905 2SD1220 | |
D1220
Abstract: 2SD1220 2SB905
|
Original |
2SD1220 2SB905 20070701-JA D1220 2SD1220 2SB905 | |